Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field
(2002) In Physica E: Low-Dimensional Systems and Nanostructures 13(2-4). p.819-822- Abstract
- We present direct measurements of the ultrafast carrier dynamics around buried nano-scale Schottky contacts with high spatial and time resolution, performed with a novel fermosecond near-field scanning optical microscope, It is shown that high optically excited carrier densities screen the built-in field around a Schottky contact and allow for efficient transport of electrons towards the contact, followed by trapping of electrons into the metal. The experimental results are modeled by a self-consistent treatment of the drift-diffusion equation for the carriers and Poisson's equation for the built-in electric field. (C) 2002 Elsevier Science B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/326316
- author
- Achermann, M ; Siegner, U ; Wernersson, Lars-Erik LU and Keller, U
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- ultrafast carrier transport, Schottky nano-contacts, near-field optics, W-GaAs
- in
- Physica E: Low-Dimensional Systems and Nanostructures
- volume
- 13
- issue
- 2-4
- pages
- 819 - 822
- publisher
- Elsevier
- external identifiers
-
- wos:000176869100169
- scopus:0036492699
- ISSN
- 1386-9477
- DOI
- 10.1016/S1386-9477(02)00209-6
- language
- English
- LU publication?
- yes
- id
- 9e2e13d7-e194-4032-91db-f4dba7ffed27 (old id 326316)
- date added to LUP
- 2016-04-01 15:44:42
- date last changed
- 2022-02-27 08:30:06
@article{9e2e13d7-e194-4032-91db-f4dba7ffed27, abstract = {{We present direct measurements of the ultrafast carrier dynamics around buried nano-scale Schottky contacts with high spatial and time resolution, performed with a novel fermosecond near-field scanning optical microscope, It is shown that high optically excited carrier densities screen the built-in field around a Schottky contact and allow for efficient transport of electrons towards the contact, followed by trapping of electrons into the metal. The experimental results are modeled by a self-consistent treatment of the drift-diffusion equation for the carriers and Poisson's equation for the built-in electric field. (C) 2002 Elsevier Science B.V. All rights reserved.}}, author = {{Achermann, M and Siegner, U and Wernersson, Lars-Erik and Keller, U}}, issn = {{1386-9477}}, keywords = {{ultrafast carrier transport; Schottky nano-contacts; near-field optics; W-GaAs}}, language = {{eng}}, number = {{2-4}}, pages = {{819--822}}, publisher = {{Elsevier}}, series = {{Physica E: Low-Dimensional Systems and Nanostructures}}, title = {{Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field}}, url = {{http://dx.doi.org/10.1016/S1386-9477(02)00209-6}}, doi = {{10.1016/S1386-9477(02)00209-6}}, volume = {{13}}, year = {{2002}}, }