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Changes induced in the surface electronic structure of Be(0001) after Si adsorption

Johansson, LI; Virojanadara, C and Thiagarajan, Balasubramanian LU (2002) In Surface Review and Letters 9(2). p.687-691
Abstract
A study of effects induced in the Be is core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be is spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At (&UGamma;) under bar the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Angstrom(-1) along both the (&UGamma;-K) under bar and (&UGamma;-M) under bar directions. At (M) under bar and beyond (K) under bar only... (More)
A study of effects induced in the Be is core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be is spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At (&UGamma;) under bar the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Angstrom(-1) along both the (&UGamma;-K) under bar and (&UGamma;-M) under bar directions. At (M) under bar and beyond (K) under bar only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Surface Review and Letters
volume
9
issue
2
pages
687 - 691
publisher
World Scientific
external identifiers
  • wos:000178109900006
  • scopus:0036553420
ISSN
0218-625X
DOI
10.1142/S0218625X02002907
language
English
LU publication?
yes
id
d194218d-edc3-4002-a2a1-785fda02584b (old id 327814)
date added to LUP
2007-10-29 14:09:53
date last changed
2017-01-01 06:40:16
@article{d194218d-edc3-4002-a2a1-785fda02584b,
  abstract     = {A study of effects induced in the Be is core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be is spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At (&UGamma;) under bar the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Angstrom(-1) along both the (&UGamma;-K) under bar and (&UGamma;-M) under bar directions. At (M) under bar and beyond (K) under bar only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.},
  author       = {Johansson, LI and Virojanadara, C and Thiagarajan, Balasubramanian},
  issn         = {0218-625X},
  language     = {eng},
  number       = {2},
  pages        = {687--691},
  publisher    = {World Scientific},
  series       = {Surface Review and Letters},
  title        = {Changes induced in the surface electronic structure of Be(0001) after Si adsorption},
  url          = {http://dx.doi.org/10.1142/S0218625X02002907},
  volume       = {9},
  year         = {2002},
}