Changes induced in the surface electronic structure of Be(0001) after Si adsorption
(2002) In Surface Review and Letters 9(2). p.687-691- Abstract
- A study of effects induced in the Be is core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be is spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At (&UGamma;) under bar the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Angstrom(-1) along both the (&UGamma;-K) under bar and (&UGamma;-M) under bar directions. At (M) under bar and beyond (K) under bar only... (More)
- A study of effects induced in the Be is core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be is spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At (&UGamma;) under bar the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Angstrom(-1) along both the (&UGamma;-K) under bar and (&UGamma;-M) under bar directions. At (M) under bar and beyond (K) under bar only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/327814
- author
- Johansson, LI ; Virojanadara, C and Thiagarajan, Balasubramanian LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Surface Review and Letters
- volume
- 9
- issue
- 2
- pages
- 687 - 691
- publisher
- World Scientific Publishing
- external identifiers
-
- wos:000178109900006
- scopus:0036553420
- ISSN
- 0218-625X
- DOI
- 10.1142/S0218625X02002907
- language
- English
- LU publication?
- yes
- id
- d194218d-edc3-4002-a2a1-785fda02584b (old id 327814)
- date added to LUP
- 2016-04-01 15:28:06
- date last changed
- 2022-02-12 08:05:49
@article{d194218d-edc3-4002-a2a1-785fda02584b,
abstract = {{A study of effects induced in the Be is core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be is spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At (&UGamma;) under bar the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Angstrom(-1) along both the (&UGamma;-K) under bar and (&UGamma;-M) under bar directions. At (M) under bar and beyond (K) under bar only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.}},
author = {{Johansson, LI and Virojanadara, C and Thiagarajan, Balasubramanian}},
issn = {{0218-625X}},
language = {{eng}},
number = {{2}},
pages = {{687--691}},
publisher = {{World Scientific Publishing}},
series = {{Surface Review and Letters}},
title = {{Changes induced in the surface electronic structure of Be(0001) after Si adsorption}},
url = {{http://dx.doi.org/10.1142/S0218625X02002907}},
doi = {{10.1142/S0218625X02002907}},
volume = {{9}},
year = {{2002}},
}