Advanced

Titanium dioxide thin-film growth on silicon(111) by chemical vapor deposition of titanium(IV) isopropoxide

Sandell, A; Anderson, MP; Alfredsson, Y; Johansson, MKJ; Schnadt, Joachim LU ; Rensmo, H; Siegbahn, H and Uvdal, Per LU (2002) In Applied Physics Reviews 92(6). p.3381-3387
Abstract
The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 degreesC. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 Angstrom), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next... (More)
The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 degreesC. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 Angstrom), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (<25 Angstrom) is best described as an amorphous TiSixOy compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (>30 Angstrom) a stoichiometric TiO2 layer starts to form. The TiO2 phase is anatase and the layer consists of particles similar to10 nm wide. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
92
issue
6
pages
3381 - 3387
publisher
American Institute of Physics
external identifiers
  • wos:000177683000066
  • scopus:18644369602
ISSN
0021-8979
DOI
10.1063/1.1501751
language
English
LU publication?
yes
id
6c147c78-9394-4be0-bb46-d5961e873ad1 (old id 330043)
date added to LUP
2007-11-09 10:00:09
date last changed
2017-09-10 03:41:18
@article{6c147c78-9394-4be0-bb46-d5961e873ad1,
  abstract     = {The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 degreesC. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness &lt;10 Angstrom), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (&lt;25 Angstrom) is best described as an amorphous TiSixOy compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (&gt;30 Angstrom) a stoichiometric TiO2 layer starts to form. The TiO2 phase is anatase and the layer consists of particles similar to10 nm wide.},
  author       = {Sandell, A and Anderson, MP and Alfredsson, Y and Johansson, MKJ and Schnadt, Joachim and Rensmo, H and Siegbahn, H and Uvdal, Per},
  issn         = {0021-8979},
  language     = {eng},
  number       = {6},
  pages        = {3381--3387},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Titanium dioxide thin-film growth on silicon(111) by chemical vapor deposition of titanium(IV) isopropoxide},
  url          = {http://dx.doi.org/10.1063/1.1501751},
  volume       = {92},
  year         = {2002},
}