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Titanium dioxide thin-film growth on silicon(111) by chemical vapor deposition of titanium(IV) isopropoxide

Sandell, A ; Anderson, MP ; Alfredsson, Y ; Johansson, MKJ ; Schnadt, Joachim LU ; Rensmo, H ; Siegbahn, H and Uvdal, Per LU (2002) In Applied Physics Reviews 92(6). p.3381-3387
Abstract
The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 degreesC. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 Angstrom), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next... (More)
The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 degreesC. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 Angstrom), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (<25 Angstrom) is best described as an amorphous TiSixOy compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (>30 Angstrom) a stoichiometric TiO2 layer starts to form. The TiO2 phase is anatase and the layer consists of particles similar to10 nm wide. (Less)
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Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
92
issue
6
pages
3381 - 3387
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000177683000066
  • scopus:18644369602
ISSN
1931-9401
DOI
10.1063/1.1501751
language
English
LU publication?
yes
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The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060), Solid State Physics (011013006), Synchrotron Radiation Research (011013009)
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6c147c78-9394-4be0-bb46-d5961e873ad1 (old id 330043)
date added to LUP
2016-04-01 12:05:37
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2020-08-12 03:17:41
@article{6c147c78-9394-4be0-bb46-d5961e873ad1,
  abstract     = {The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 degreesC. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness &lt;10 Angstrom), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (&lt;25 Angstrom) is best described as an amorphous TiSixOy compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (&gt;30 Angstrom) a stoichiometric TiO2 layer starts to form. The TiO2 phase is anatase and the layer consists of particles similar to10 nm wide.},
  author       = {Sandell, A and Anderson, MP and Alfredsson, Y and Johansson, MKJ and Schnadt, Joachim and Rensmo, H and Siegbahn, H and Uvdal, Per},
  issn         = {1931-9401},
  language     = {eng},
  number       = {6},
  pages        = {3381--3387},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Reviews},
  title        = {Titanium dioxide thin-film growth on silicon(111) by chemical vapor deposition of titanium(IV) isopropoxide},
  url          = {http://dx.doi.org/10.1063/1.1501751},
  doi          = {10.1063/1.1501751},
  volume       = {92},
  year         = {2002},
}