Three-dimensional integrated resonant tunneling transistor with multiple peaks
(2002) In Applied Physics Letters 81(10). p.1905-1907- Abstract
- A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/330197
- author
- Lind, Erik LU ; Pietzonka, Ines ; Lindström, Peter LU ; Seifert, Werner LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 81
- issue
- 10
- pages
- 1905 - 1907
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000177676200052
- scopus:79956006423
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1505748
- language
- English
- LU publication?
- yes
- id
- 6acf0611-a0d8-4c6a-9ca9-d50e113ada21 (old id 330197)
- date added to LUP
- 2016-04-01 11:56:50
- date last changed
- 2024-06-04 02:14:23
@article{6acf0611-a0d8-4c6a-9ca9-d50e113ada21, abstract = {{A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.}}, author = {{Lind, Erik and Pietzonka, Ines and Lindström, Peter and Seifert, Werner and Wernersson, Lars-Erik}}, issn = {{0003-6951}}, language = {{eng}}, number = {{10}}, pages = {{1905--1907}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Three-dimensional integrated resonant tunneling transistor with multiple peaks}}, url = {{http://dx.doi.org/10.1063/1.1505748}}, doi = {{10.1063/1.1505748}}, volume = {{81}}, year = {{2002}}, }