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Three-dimensional integrated resonant tunneling transistor with multiple peaks

Lind, Erik LU ; Pietzonka, Ines; Lindström, Peter LU ; Seifert, Werner LU and Wernersson, Lars-Erik LU (2002) In Applied Physics Letters 81(10). p.1905-1907
Abstract
A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
81
issue
10
pages
1905 - 1907
publisher
American Institute of Physics
external identifiers
  • wos:000177676200052
  • scopus:79956006423
ISSN
0003-6951
DOI
10.1063/1.1505748
language
English
LU publication?
yes
id
6acf0611-a0d8-4c6a-9ca9-d50e113ada21 (old id 330197)
date added to LUP
2007-11-14 14:25:49
date last changed
2017-01-01 04:41:31
@article{6acf0611-a0d8-4c6a-9ca9-d50e113ada21,
  abstract     = {A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.},
  author       = {Lind, Erik and Pietzonka, Ines and Lindström, Peter and Seifert, Werner and Wernersson, Lars-Erik},
  issn         = {0003-6951},
  language     = {eng},
  number       = {10},
  pages        = {1905--1907},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Three-dimensional integrated resonant tunneling transistor with multiple peaks},
  url          = {http://dx.doi.org/10.1063/1.1505748},
  volume       = {81},
  year         = {2002},
}