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Surface states on GaN(000(1)over-bar)(1x1) - an angle-resolved photoemission study

Kowalski, BJ; Iwanowski, RJ; Sadowski, Janusz LU ; Kanski, J; Grzegory, I and Porowski, S (2002) In Surface Science 507. p.186-191
Abstract
We present the results of angle-resolved photoemission studies on the (0 0 0 (1) over bar) (N-polar) surface of bulk gallium nitride crystals. The bulk and surface band Structure was investigated along Gamma-A and Gamma-K-M directions on the surface with (1 x 1) symmetry. The sets of spectra were obtained in normal and off-normal emission for the surface prepared by Ar+ ion sputtering and annealing and for the same surface enriched with Ga under molecular beam epitaxy conditions. The bulk and surface related features were identified by analysis of the acquired experimental data and by comparison with the results of band structure Calculations.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
surface potential, function, angle resolved photoemission, surface electronic phenomena (work, surface states, etc.), gallium nitride, single crystal surfaces
in
Surface Science
volume
507
pages
186 - 191
publisher
Elsevier
external identifiers
  • wos:000176583700036
ISSN
0039-6028
language
English
LU publication?
yes
id
b28395af-9c6e-4a7c-ab3b-ed5d233adf3d (old id 333996)
date added to LUP
2007-11-07 14:47:47
date last changed
2016-04-16 03:42:33
@article{b28395af-9c6e-4a7c-ab3b-ed5d233adf3d,
  abstract     = {We present the results of angle-resolved photoemission studies on the (0 0 0 (1) over bar) (N-polar) surface of bulk gallium nitride crystals. The bulk and surface band Structure was investigated along Gamma-A and Gamma-K-M directions on the surface with (1 x 1) symmetry. The sets of spectra were obtained in normal and off-normal emission for the surface prepared by Ar+ ion sputtering and annealing and for the same surface enriched with Ga under molecular beam epitaxy conditions. The bulk and surface related features were identified by analysis of the acquired experimental data and by comparison with the results of band structure Calculations.},
  author       = {Kowalski, BJ and Iwanowski, RJ and Sadowski, Janusz and Kanski, J and Grzegory, I and Porowski, S},
  issn         = {0039-6028},
  keyword      = {surface potential,function,angle resolved photoemission,surface electronic phenomena (work,surface states,etc.),gallium nitride,single crystal surfaces},
  language     = {eng},
  pages        = {186--191},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {Surface states on GaN(000(1)over-bar)(1x1) - an angle-resolved photoemission study},
  volume       = {507},
  year         = {2002},
}