Advanced

Structural characterization of amorphised InAs with synchrotron radiation

Azevedo, GD; Ridgway, MC; Yu, KM; Glover, Chris LU and Foran, GJ (2002) 15th International Conference on Ion-Beam Analysis (IBA-15) In Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190. p.851-855
Abstract
Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Walter factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
InAs, amorphous solids, ion implantation, EXAFS
in
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
volume
190
pages
851 - 855
publisher
Elsevier
conference name
15th International Conference on Ion-Beam Analysis (IBA-15)
external identifiers
  • wos:000176108800171
  • scopus:0036568970
ISSN
0168-583X
DOI
10.1016/S0168-583X(02)00471-8
language
English
LU publication?
yes
id
fcbb3f91-a029-48df-bc29-5fbd53188e6d (old id 335457)
date added to LUP
2007-08-08 08:24:56
date last changed
2017-01-01 06:44:53
@inproceedings{fcbb3f91-a029-48df-bc29-5fbd53188e6d,
  abstract     = {Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Walter factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general.},
  author       = {Azevedo, GD and Ridgway, MC and Yu, KM and Glover, Chris and Foran, GJ},
  booktitle    = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
  issn         = {0168-583X},
  keyword      = {InAs,amorphous solids,ion implantation,EXAFS},
  language     = {eng},
  pages        = {851--855},
  publisher    = {Elsevier},
  title        = {Structural characterization of amorphised InAs with synchrotron radiation},
  url          = {http://dx.doi.org/10.1016/S0168-583X(02)00471-8},
  volume       = {190},
  year         = {2002},
}