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Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation

Dahl, J.; Kuzmin, M.; Adell, Johan LU ; Thiagarajan, Balasubramanian LU and Laukkanen, P. (2012) In Physical Review B (Condensed Matter and Materials Physics) 86(24).
Abstract
Development of InN films for devices is hindered due to metallic In clusters, formed readily during growth, and unintentional n-type conductivity of the nominally undoped films, including surface electron-accumulation layers via the Fermi level pinning into the conduction band. Plasma nitridation eliminates even large In clusters from the surface by changing them to two-dimensional InN [Yamaguchi and Nanishi, Appl. Phys. Expr. 2, 051001 (2009)]. Here we utilized a similar approach, that is, nitridation of In-covered surfaces with ammonia (NH3) to grow thin, up to 25 nm thick polar InN films on Si(111) and GaN(0001) substrates. By means of scanning tunneling microscopy and spectroscopy, as well as photoelectron spectroscopy, we show that... (More)
Development of InN films for devices is hindered due to metallic In clusters, formed readily during growth, and unintentional n-type conductivity of the nominally undoped films, including surface electron-accumulation layers via the Fermi level pinning into the conduction band. Plasma nitridation eliminates even large In clusters from the surface by changing them to two-dimensional InN [Yamaguchi and Nanishi, Appl. Phys. Expr. 2, 051001 (2009)]. Here we utilized a similar approach, that is, nitridation of In-covered surfaces with ammonia (NH3) to grow thin, up to 25 nm thick polar InN films on Si(111) and GaN(0001) substrates. By means of scanning tunneling microscopy and spectroscopy, as well as photoelectron spectroscopy, we show that this simple NH3 nitridation provides the hitherto not reported formation of polar InN(000-1) films with the surface Fermi level close to the valence band maximum, as recent calculations [Belabbes et al., Phys. Rev. B 84, 205304 (2011)] predict. DOI: 10.1103/PhysRevB.86.245304 (Less)
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organization
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type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
86
issue
24
publisher
American Physical Society
external identifiers
  • wos:000312065400006
  • scopus:84871082470
ISSN
1098-0121
DOI
10.1103/PhysRevB.86.245304
language
English
LU publication?
yes
id
5bb91298-b41b-46b4-9cec-e290039cd591 (old id 3371982)
date added to LUP
2013-02-01 13:31:13
date last changed
2017-01-01 06:14:22
@article{5bb91298-b41b-46b4-9cec-e290039cd591,
  abstract     = {Development of InN films for devices is hindered due to metallic In clusters, formed readily during growth, and unintentional n-type conductivity of the nominally undoped films, including surface electron-accumulation layers via the Fermi level pinning into the conduction band. Plasma nitridation eliminates even large In clusters from the surface by changing them to two-dimensional InN [Yamaguchi and Nanishi, Appl. Phys. Expr. 2, 051001 (2009)]. Here we utilized a similar approach, that is, nitridation of In-covered surfaces with ammonia (NH3) to grow thin, up to 25 nm thick polar InN films on Si(111) and GaN(0001) substrates. By means of scanning tunneling microscopy and spectroscopy, as well as photoelectron spectroscopy, we show that this simple NH3 nitridation provides the hitherto not reported formation of polar InN(000-1) films with the surface Fermi level close to the valence band maximum, as recent calculations [Belabbes et al., Phys. Rev. B 84, 205304 (2011)] predict. DOI: 10.1103/PhysRevB.86.245304},
  articleno    = {245304},
  author       = {Dahl, J. and Kuzmin, M. and Adell, Johan and Thiagarajan, Balasubramanian and Laukkanen, P.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {24},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation},
  url          = {http://dx.doi.org/10.1103/PhysRevB.86.245304},
  volume       = {86},
  year         = {2012},
}