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Growth of ultrathin ZrO2 films on Si(100): Film-thickness-dependent band alignment

Sandell, A ; Karlsson, PG ; Richter, JH ; Blomquist, Jakob LU ; Uvdal, Per LU and Grehk, TM (2006) In Applied Physics Letters 88(13).
Abstract
The band alignment of ultrathin ZrO2 films of different thickness formed on Si(100) have been monitored with synchrotron radiation photoelectron spectroscopy and x-ray absorption spectroscopy. The films were deposited sequentially by way of metal-organic chemical-vapor deposition in ultrahigh vacuum. A significant decrease in the conduction band offset is found for increasing film thickness. It is accompanied by a corresponding increase of the valence band offset. The variations originate in the formation of an interfacial layer characterized by a lower degree of Zr-O interaction than in bulk ZrO2 but with no clear evidence for partially occupied Zr 4d dangling bonds. (c) 2006 American Institute of Physics.
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
88
issue
13
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000236465100062
  • scopus:33645514984
ISSN
0003-6951
DOI
10.1063/1.2190073
language
English
LU publication?
yes
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The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060)
id
337d82cb-181b-44d2-8118-66c968b50152 (old id 414931)
date added to LUP
2016-04-01 11:57:45
date last changed
2020-03-11 02:40:52
@article{337d82cb-181b-44d2-8118-66c968b50152,
  abstract     = {The band alignment of ultrathin ZrO2 films of different thickness formed on Si(100) have been monitored with synchrotron radiation photoelectron spectroscopy and x-ray absorption spectroscopy. The films were deposited sequentially by way of metal-organic chemical-vapor deposition in ultrahigh vacuum. A significant decrease in the conduction band offset is found for increasing film thickness. It is accompanied by a corresponding increase of the valence band offset. The variations originate in the formation of an interfacial layer characterized by a lower degree of Zr-O interaction than in bulk ZrO2 but with no clear evidence for partially occupied Zr 4d dangling bonds. (c) 2006 American Institute of Physics.},
  author       = {Sandell, A and Karlsson, PG and Richter, JH and Blomquist, Jakob and Uvdal, Per and Grehk, TM},
  issn         = {0003-6951},
  language     = {eng},
  number       = {13},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Letters},
  title        = {Growth of ultrathin ZrO2 films on Si(100): Film-thickness-dependent band alignment},
  url          = {http://dx.doi.org/10.1063/1.2190073},
  doi          = {10.1063/1.2190073},
  volume       = {88},
  year         = {2006},
}