High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions
(2012) In Nano Letters 12(11). p.5622-5625- Abstract
- We report on the fabrication of InAs nanowires coupled to superconducting leads with high critical current and widely tunable conductance. We implemented a double lift off nanofabrication Method to get very short nanowire devices with Ohmic contacts. We observe very high critical. currents of up to 800 nA in a wire with a diameter of 80 nm. The current- voltage characteristics of longer and suspended nanowires display,either. Coulomb blockade or supercurrent depending on a local gate voltage, combining different regimes of transport in a single device.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3388397
- author
- Abay, Simon ; Nilsson, Henrik LU ; Wu, Fan ; Xu, Hongqi LU ; Wilson, C. M. and Delsing, Per
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- InAs nanowires, supercurrent, Andreep reflection, Coulomb blockade
- in
- Nano Letters
- volume
- 12
- issue
- 11
- pages
- 5622 - 5625
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000311244400030
- scopus:84869161773
- pmid:23030250
- ISSN
- 1530-6992
- DOI
- 10.1021/nl302740f
- language
- English
- LU publication?
- yes
- id
- de2f0fd1-8af0-4769-8d63-d6d286a6a2f8 (old id 3388397)
- date added to LUP
- 2016-04-01 14:17:30
- date last changed
- 2023-09-03 12:15:26
@article{de2f0fd1-8af0-4769-8d63-d6d286a6a2f8, abstract = {{We report on the fabrication of InAs nanowires coupled to superconducting leads with high critical current and widely tunable conductance. We implemented a double lift off nanofabrication Method to get very short nanowire devices with Ohmic contacts. We observe very high critical. currents of up to 800 nA in a wire with a diameter of 80 nm. The current- voltage characteristics of longer and suspended nanowires display,either. Coulomb blockade or supercurrent depending on a local gate voltage, combining different regimes of transport in a single device.}}, author = {{Abay, Simon and Nilsson, Henrik and Wu, Fan and Xu, Hongqi and Wilson, C. M. and Delsing, Per}}, issn = {{1530-6992}}, keywords = {{InAs nanowires; supercurrent; Andreep reflection; Coulomb blockade}}, language = {{eng}}, number = {{11}}, pages = {{5622--5625}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions}}, url = {{http://dx.doi.org/10.1021/nl302740f}}, doi = {{10.1021/nl302740f}}, volume = {{12}}, year = {{2012}}, }