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Photoemission study of GaAs (100) grown at low temperature

Asklund, H; Ilver, L; Kanski, J; Sadowski, Janusz LU and Karlsteen, M (2002) In Physical Review B (Condensed Matter and Materials Physics) 65(11).
Abstract
GaAs(100) layers grown by low-temperature (LT) molecular beam epitaxy were studied by means of valence-band and core-level photoelectron spectroscopy. Small differences were found between valence-band spectra from the LT layers and corresponding layers grown at high temperature. In the Ga 3d spectra a new component was found in the LT-GaAs. The relative intensity of this component was found to be practically constant with varying probing depth. It is proposed that this component represents sites coordinated to the five-atom As clusters formed at As-Ga antisites. This interpretation implies a higher density of antisite defects in the near-surface region than typically found in the bulk.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
65
issue
11
publisher
American Physical Society
external identifiers
  • wos:000174548400104
  • scopus:0037087943
ISSN
1098-0121
DOI
10.1103/PhysRevB.65.115335
language
English
LU publication?
yes
id
66d71b3e-4220-470e-b618-5bfbacc5e6be (old id 341775)
date added to LUP
2007-08-07 16:10:11
date last changed
2017-01-01 07:00:50
@article{66d71b3e-4220-470e-b618-5bfbacc5e6be,
  abstract     = {GaAs(100) layers grown by low-temperature (LT) molecular beam epitaxy were studied by means of valence-band and core-level photoelectron spectroscopy. Small differences were found between valence-band spectra from the LT layers and corresponding layers grown at high temperature. In the Ga 3d spectra a new component was found in the LT-GaAs. The relative intensity of this component was found to be practically constant with varying probing depth. It is proposed that this component represents sites coordinated to the five-atom As clusters formed at As-Ga antisites. This interpretation implies a higher density of antisite defects in the near-surface region than typically found in the bulk.},
  author       = {Asklund, H and Ilver, L and Kanski, J and Sadowski, Janusz and Karlsteen, M},
  issn         = {1098-0121},
  language     = {eng},
  number       = {11},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Photoemission study of GaAs (100) grown at low temperature},
  url          = {http://dx.doi.org/10.1103/PhysRevB.65.115335},
  volume       = {65},
  year         = {2002},
}