Photoemission study of GaAs (100) grown at low temperature
(2002) In Physical Review B (Condensed Matter and Materials Physics) 65(11).- Abstract
- GaAs(100) layers grown by low-temperature (LT) molecular beam epitaxy were studied by means of valence-band and core-level photoelectron spectroscopy. Small differences were found between valence-band spectra from the LT layers and corresponding layers grown at high temperature. In the Ga 3d spectra a new component was found in the LT-GaAs. The relative intensity of this component was found to be practically constant with varying probing depth. It is proposed that this component represents sites coordinated to the five-atom As clusters formed at As-Ga antisites. This interpretation implies a higher density of antisite defects in the near-surface region than typically found in the bulk.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/341775
- author
- Asklund, H ; Ilver, L ; Kanski, J ; Sadowski, Janusz LU and Karlsteen, M
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 65
- issue
- 11
- publisher
- American Physical Society
- external identifiers
-
- wos:000174548400104
- scopus:0037087943
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.65.115335
- language
- English
- LU publication?
- yes
- id
- 66d71b3e-4220-470e-b618-5bfbacc5e6be (old id 341775)
- date added to LUP
- 2016-04-01 16:16:44
- date last changed
- 2022-04-07 07:03:56
@article{66d71b3e-4220-470e-b618-5bfbacc5e6be, abstract = {{GaAs(100) layers grown by low-temperature (LT) molecular beam epitaxy were studied by means of valence-band and core-level photoelectron spectroscopy. Small differences were found between valence-band spectra from the LT layers and corresponding layers grown at high temperature. In the Ga 3d spectra a new component was found in the LT-GaAs. The relative intensity of this component was found to be practically constant with varying probing depth. It is proposed that this component represents sites coordinated to the five-atom As clusters formed at As-Ga antisites. This interpretation implies a higher density of antisite defects in the near-surface region than typically found in the bulk.}}, author = {{Asklund, H and Ilver, L and Kanski, J and Sadowski, Janusz and Karlsteen, M}}, issn = {{1098-0121}}, language = {{eng}}, number = {{11}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Photoemission study of GaAs (100) grown at low temperature}}, url = {{http://dx.doi.org/10.1103/PhysRevB.65.115335}}, doi = {{10.1103/PhysRevB.65.115335}}, volume = {{65}}, year = {{2002}}, }