Optically induced charge storage and current generation in InAs quantum dots
(2002) In Physical Review B (Condensed Matter and Materials Physics) 65(7).- Abstract
- We report on optically induced charge storage effects and cur-rent generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/342740
- author
- Pettersson, H ; Bååth, L ; Carlsson, N ; Seifert, Werner LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 65
- issue
- 7
- article number
- 073304
- publisher
- American Physical Society
- external identifiers
-
- wos:000174030900011
- scopus:17444452789
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.65.073304
- language
- English
- LU publication?
- yes
- id
- 80ed4aba-699c-442f-8f68-a3321ec78810 (old id 342740)
- date added to LUP
- 2016-04-01 16:49:28
- date last changed
- 2022-01-28 22:23:14
@article{80ed4aba-699c-442f-8f68-a3321ec78810, abstract = {{We report on optically induced charge storage effects and cur-rent generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.}}, author = {{Pettersson, H and Bååth, L and Carlsson, N and Seifert, Werner and Samuelson, Lars}}, issn = {{1098-0121}}, language = {{eng}}, number = {{7}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Optically induced charge storage and current generation in InAs quantum dots}}, url = {{http://dx.doi.org/10.1103/PhysRevB.65.073304}}, doi = {{10.1103/PhysRevB.65.073304}}, volume = {{65}}, year = {{2002}}, }