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Diode and transistor behaviors of three-terminal ballistic junctions

Xu, Hongqi LU (2002) In Applied Physics Letters 80(5). p.853-855
Abstract
We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, V-c, from the central branch as a function of the voltage, Vl, applied to the left branch shows a diode characteristic: V-c approximately follows Vl linearly when Vl is negative, and saturates at a small positive value when Vl becomes positive. It is also found that the saturation level of V-c as well as the threshold value of Vl, beyond which V-c saturates, can be modulated by application of a voltage, V-r, to the right branch contact of the TBJ. Thus, the TBJ can also be used as a transistor. TBJ diodes and TBJ... (More)
We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, V-c, from the central branch as a function of the voltage, Vl, applied to the left branch shows a diode characteristic: V-c approximately follows Vl linearly when Vl is negative, and saturates at a small positive value when Vl becomes positive. It is also found that the saturation level of V-c as well as the threshold value of Vl, beyond which V-c saturates, can be modulated by application of a voltage, V-r, to the right branch contact of the TBJ. Thus, the TBJ can also be used as a transistor. TBJ diodes and TBJ transistors with dimensions on the order of sub 100 nm, or much less, can be made from standard high-quality electronic materials with state-of-the-art nanofabrication technology. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
transistors, semiconductor diodes, semiconductor device models, nanotechnology
in
Applied Physics Letters
volume
80
issue
5
pages
853 - 855
publisher
American Institute of Physics
external identifiers
  • wos:000173617700050
  • scopus:79956021220
ISSN
0003-6951
DOI
10.1063/1.1447316
language
English
LU publication?
yes
id
a2bfc7fe-699f-4c5b-91b2-15e3d72ad5c5 (old id 344262)
date added to LUP
2007-11-19 12:34:24
date last changed
2017-01-01 04:56:30
@article{a2bfc7fe-699f-4c5b-91b2-15e3d72ad5c5,
  abstract     = {We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, V-c, from the central branch as a function of the voltage, Vl, applied to the left branch shows a diode characteristic: V-c approximately follows Vl linearly when Vl is negative, and saturates at a small positive value when Vl becomes positive. It is also found that the saturation level of V-c as well as the threshold value of Vl, beyond which V-c saturates, can be modulated by application of a voltage, V-r, to the right branch contact of the TBJ. Thus, the TBJ can also be used as a transistor. TBJ diodes and TBJ transistors with dimensions on the order of sub 100 nm, or much less, can be made from standard high-quality electronic materials with state-of-the-art nanofabrication technology.},
  author       = {Xu, Hongqi},
  issn         = {0003-6951},
  keyword      = {transistors,semiconductor diodes,semiconductor device models,nanotechnology},
  language     = {eng},
  number       = {5},
  pages        = {853--855},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Diode and transistor behaviors of three-terminal ballistic junctions},
  url          = {http://dx.doi.org/10.1063/1.1447316},
  volume       = {80},
  year         = {2002},
}