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Single-electron tunneling effects in a metallic double dot device

Junno, T; Carlsson, SB; Xu, Hongqi LU ; Samuelson, Lars LU ; Orlov, AO and Snider, GL (2002) In Applied Physics Letters 80(4). p.667-669
Abstract
We report on differential conductance measurements on a gold double-dot structure at 4.2 K. The two dots were connected in series by tunnel junctions formed by atomic force microscopy manipulation of nanodisks. The tunnel junctions were made strongly asymmetric. The characteristic honeycomb-shaped charging diagram separating different Coulomb blockade regions of well-defined occupancy of electrons was observed and the cells in the charging diagram were found to be skewed by the asymmetry of the tunnel junctions. In addition, a double-dot Coulomb staircase structure, with steps of varying width, was observed and was studied for varying gate voltage. The occupancy of electrons on the two dots was determined as a function of both drain source... (More)
We report on differential conductance measurements on a gold double-dot structure at 4.2 K. The two dots were connected in series by tunnel junctions formed by atomic force microscopy manipulation of nanodisks. The tunnel junctions were made strongly asymmetric. The characteristic honeycomb-shaped charging diagram separating different Coulomb blockade regions of well-defined occupancy of electrons was observed and the cells in the charging diagram were found to be skewed by the asymmetry of the tunnel junctions. In addition, a double-dot Coulomb staircase structure, with steps of varying width, was observed and was studied for varying gate voltage. The occupancy of electrons on the two dots was determined as a function of both drain source and gate voltages. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
80
issue
4
pages
667 - 669
publisher
American Institute of Physics
external identifiers
  • wos:000173508900045
  • scopus:79955994438
ISSN
0003-6951
DOI
10.1063/1.1436532
language
English
LU publication?
yes
id
e1642dcb-d66a-45a6-9059-b1b17a5828f7 (old id 344586)
date added to LUP
2007-10-31 15:26:11
date last changed
2017-07-30 03:48:09
@article{e1642dcb-d66a-45a6-9059-b1b17a5828f7,
  abstract     = {We report on differential conductance measurements on a gold double-dot structure at 4.2 K. The two dots were connected in series by tunnel junctions formed by atomic force microscopy manipulation of nanodisks. The tunnel junctions were made strongly asymmetric. The characteristic honeycomb-shaped charging diagram separating different Coulomb blockade regions of well-defined occupancy of electrons was observed and the cells in the charging diagram were found to be skewed by the asymmetry of the tunnel junctions. In addition, a double-dot Coulomb staircase structure, with steps of varying width, was observed and was studied for varying gate voltage. The occupancy of electrons on the two dots was determined as a function of both drain source and gate voltages.},
  author       = {Junno, T and Carlsson, SB and Xu, Hongqi and Samuelson, Lars and Orlov, AO and Snider, GL},
  issn         = {0003-6951},
  language     = {eng},
  number       = {4},
  pages        = {667--669},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Single-electron tunneling effects in a metallic double dot device},
  url          = {http://dx.doi.org/10.1063/1.1436532},
  volume       = {80},
  year         = {2002},
}