Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mndoped GaAs
(2013) In Journal of Physics D: Applied Physics 46(14). p.7-145309- Abstract
- The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 ◦C. After heat treatment at 400, 560 and 630 ◦C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3567583
- author
- Kovacs, Andras ; Sadowski, Janusz LU ; Kasama, Takeshi ; Duchamp, Martial and Rafal, Dunin-Borkowski
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Physics D: Applied Physics
- volume
- 46
- issue
- 14
- pages
- 7 - 145309
- publisher
- IOP Publishing
- external identifiers
-
- wos:000316249400025
- scopus:84875289318
- ISSN
- 1361-6463
- DOI
- 10.1088/0022-3727/46/14/145309
- language
- English
- LU publication?
- yes
- id
- 460ff860-60e3-40b6-a95e-af89cd3d7219 (old id 3567583)
- date added to LUP
- 2016-04-01 10:34:29
- date last changed
- 2022-04-04 19:20:46
@article{460ff860-60e3-40b6-a95e-af89cd3d7219, abstract = {{The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 ◦C. After heat treatment at 400, 560 and 630 ◦C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed.}}, author = {{Kovacs, Andras and Sadowski, Janusz and Kasama, Takeshi and Duchamp, Martial and Rafal, Dunin-Borkowski}}, issn = {{1361-6463}}, language = {{eng}}, number = {{14}}, pages = {{7--145309}}, publisher = {{IOP Publishing}}, series = {{Journal of Physics D: Applied Physics}}, title = {{Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mndoped GaAs}}, url = {{http://dx.doi.org/10.1088/0022-3727/46/14/145309}}, doi = {{10.1088/0022-3727/46/14/145309}}, volume = {{46}}, year = {{2013}}, }