Photoluminescence study of Zn-doped wurtzite InP core-shell nanowires
(2013) In Applied Physics Letters 102(3).- Abstract
- In situ Zn doping of InP shells on nanowires in the wurtzite crystal structure has been investigated using diethyl zinc (DEZn) as a precursor. Photoluminescence measurements of single nanowires unexpectedly exhibit an acceptor-related peak at room temperature, in contrast to thin films grown at identical conditions. This peak is observable even using low DEZn molar fractions, which indicates efficient Zn incorporation at the InP wurtzite facets. The spectra indicate a 52 meV binding energy for the Zn acceptor in wurtzite, which is higher than that of bulk zinc blende. These results demonstrate that in situ Zn doping of wurtzite InP nanowire shells can be achieved. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788925]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3594962
- author
- Wallentin, Jesper LU ; Borgström, Magnus LU ; Samuelson, Lars LU ; Ekawa, Mitsuru and Kawaguchi, Kenichi
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 102
- issue
- 3
- article number
- 032105
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000314032600049
- scopus:84872972558
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4788925
- language
- English
- LU publication?
- yes
- id
- 5fd959f4-05fb-497e-844d-7b55d1ca2cec (old id 3594962)
- date added to LUP
- 2016-04-01 11:11:47
- date last changed
- 2023-09-14 21:21:58
@article{5fd959f4-05fb-497e-844d-7b55d1ca2cec, abstract = {{In situ Zn doping of InP shells on nanowires in the wurtzite crystal structure has been investigated using diethyl zinc (DEZn) as a precursor. Photoluminescence measurements of single nanowires unexpectedly exhibit an acceptor-related peak at room temperature, in contrast to thin films grown at identical conditions. This peak is observable even using low DEZn molar fractions, which indicates efficient Zn incorporation at the InP wurtzite facets. The spectra indicate a 52 meV binding energy for the Zn acceptor in wurtzite, which is higher than that of bulk zinc blende. These results demonstrate that in situ Zn doping of wurtzite InP nanowire shells can be achieved. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788925]}}, author = {{Wallentin, Jesper and Borgström, Magnus and Samuelson, Lars and Ekawa, Mitsuru and Kawaguchi, Kenichi}}, issn = {{0003-6951}}, language = {{eng}}, number = {{3}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Photoluminescence study of Zn-doped wurtzite InP core-shell nanowires}}, url = {{http://dx.doi.org/10.1063/1.4788925}}, doi = {{10.1063/1.4788925}}, volume = {{102}}, year = {{2013}}, }