Photoexcitation of excitons in self-assembled quantum dots
(2004) In Applied Physics Letters 85(21). p.5046-5048- Abstract
- Using an approach of combining Fourier transform infrared spectroscopy with resonant illumination from a secondary external light source, we have measured the photocurrent (PC) for multiple layers of self-assembled InAs dots embedded in a matrix of InP. Without external illumination, we observe photoexcitation of electrons from bound states in the dots to the InP barrier. By additional illumination from the external light source, a strong broadening of the PC signal is observed. We interpret this broadening in terms of photoexcitation of electrons in the presence of additional holes in the dots created by the external light source. We extract the spectral distribution of the photoexcitation process at 6 and 77 K, respectively, and show by... (More)
- Using an approach of combining Fourier transform infrared spectroscopy with resonant illumination from a secondary external light source, we have measured the photocurrent (PC) for multiple layers of self-assembled InAs dots embedded in a matrix of InP. Without external illumination, we observe photoexcitation of electrons from bound states in the dots to the InP barrier. By additional illumination from the external light source, a strong broadening of the PC signal is observed. We interpret this broadening in terms of photoexcitation of electrons in the presence of additional holes in the dots created by the external light source. We extract the spectral distribution of the photoexcitation process at 6 and 77 K, respectively, and show by comparison with theoretical calculations that it is consistent with an exciton binding energy of 20 meV. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/260363
- author
- Pettersson, H ; Landin, L ; Liu, R ; Seifert, Werner LU ; Pistol, Mats-Erik LU and Samuelson, Lars LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 85
- issue
- 21
- pages
- 5046 - 5048
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000225300600073
- scopus:19144366094
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1824174
- language
- English
- LU publication?
- yes
- id
- 386348a8-1502-4794-9931-7582a04cfabf (old id 260363)
- date added to LUP
- 2016-04-01 12:17:55
- date last changed
- 2022-03-31 11:03:15
@article{386348a8-1502-4794-9931-7582a04cfabf,
abstract = {{Using an approach of combining Fourier transform infrared spectroscopy with resonant illumination from a secondary external light source, we have measured the photocurrent (PC) for multiple layers of self-assembled InAs dots embedded in a matrix of InP. Without external illumination, we observe photoexcitation of electrons from bound states in the dots to the InP barrier. By additional illumination from the external light source, a strong broadening of the PC signal is observed. We interpret this broadening in terms of photoexcitation of electrons in the presence of additional holes in the dots created by the external light source. We extract the spectral distribution of the photoexcitation process at 6 and 77 K, respectively, and show by comparison with theoretical calculations that it is consistent with an exciton binding energy of 20 meV.}},
author = {{Pettersson, H and Landin, L and Liu, R and Seifert, Werner and Pistol, Mats-Erik and Samuelson, Lars}},
issn = {{0003-6951}},
language = {{eng}},
number = {{21}},
pages = {{5046--5048}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Photoexcitation of excitons in self-assembled quantum dots}},
url = {{http://dx.doi.org/10.1063/1.1824174}},
doi = {{10.1063/1.1824174}},
volume = {{85}},
year = {{2004}},
}