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ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

Janik, E. ; Sadowski, Janusz LU ; Dluzewski, P. ; Kret, S. ; Baczewski, L. T. ; Petroutchik, A. ; Lusakowska, E. ; Wrobel, J. ; Zaleszczyk, W. and Karczewski, G. , et al. (2006) In Applied Physics Letters 89(13).
Abstract
ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 mu m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 angstrom thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 degrees to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is < 111 >.
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
89
issue
13
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000240875800114
  • scopus:33749248462
ISSN
0003-6951
DOI
10.1063/1.2357334
language
English
LU publication?
yes
id
cf94bbf5-f79d-41a5-b227-2a3306140dff (old id 389817)
date added to LUP
2016-04-01 12:30:29
date last changed
2022-04-21 08:16:10
@article{cf94bbf5-f79d-41a5-b227-2a3306140dff,
  abstract     = {{ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 mu m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 angstrom thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 degrees to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is &lt; 111 &gt;.}},
  author       = {{Janik, E. and Sadowski, Janusz and Dluzewski, P. and Kret, S. and Baczewski, L. T. and Petroutchik, A. and Lusakowska, E. and Wrobel, J. and Zaleszczyk, W. and Karczewski, G. and Wojtowicz, T. and Presz, A.}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{13}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy}},
  url          = {{http://dx.doi.org/10.1063/1.2357334}},
  doi          = {{10.1063/1.2357334}},
  volume       = {{89}},
  year         = {{2006}},
}