Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si
(2015) In Journal of Applied Physics 117(14).- Abstract
A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 °C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by... (More)
A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 °C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by Knudsen diffusion in the vapor, but an additional contribution of In surface diffusion reduces the V/III ratio. The results reveal the interplay of growth parameters, crystal facets and template geometry and thus are generally applicable for nanoscale selective epitaxy.
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- author
- Borg, Mattias LU ; Schmid, Heinz ; Moselund, Kirsten E. ; Cutaia, Davide and Riel, Heike
- publishing date
- 2015-04-14
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Applied Physics
- volume
- 117
- issue
- 14
- article number
- 144303
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:84927618871
- ISSN
- 0021-8979
- DOI
- 10.1063/1.4916984
- language
- English
- LU publication?
- no
- id
- 3949f69b-ed27-43c9-9b10-c397e7a6e308
- date added to LUP
- 2016-04-20 10:23:05
- date last changed
- 2022-03-23 22:32:44
@article{3949f69b-ed27-43c9-9b10-c397e7a6e308, abstract = {{<p>A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 °C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by Knudsen diffusion in the vapor, but an additional contribution of In surface diffusion reduces the V/III ratio. The results reveal the interplay of growth parameters, crystal facets and template geometry and thus are generally applicable for nanoscale selective epitaxy.</p>}}, author = {{Borg, Mattias and Schmid, Heinz and Moselund, Kirsten E. and Cutaia, Davide and Riel, Heike}}, issn = {{0021-8979}}, language = {{eng}}, month = {{04}}, number = {{14}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Journal of Applied Physics}}, title = {{Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si}}, url = {{http://dx.doi.org/10.1063/1.4916984}}, doi = {{10.1063/1.4916984}}, volume = {{117}}, year = {{2015}}, }