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Synthesis and characterization of cobalt silicide films on silicon

Joensson, C T ; Maximov, Ivan LU ; Whitlow, Harry J LU ; Shutthanandan, V. ; Saraf, L. ; McCready, D. E. ; Arey, B. W. ; Zhang, Y. and Thevuthasan, S. (2006) Seventeenth International Conference on Ion Beam Analysis 249. p.532-535
Abstract
Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 degrees C did not alter the composition at the... (More)
Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 degrees C did not alter the composition at the interface except small amount Co diffusion into Si. Annealing at 800 degrees C promotes the evaporation of the oxides from the interface and, as a result, clean CoSi2 films were formed. Although the interface appeared to be sharp within the RBS resolution after high temperature annealing, the surface topography was relatively rough with varying size of crystal grains. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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author
; ; ; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
magnetron sputtering, cobalt silicide, NRA, RBS
host publication
Ion Beam Analysis - Proceedings of the Seventeenth International Conference on Ion Beam Analysis (Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms)
volume
249
pages
532 - 535
publisher
Elsevier
conference name
Seventeenth International Conference on Ion Beam Analysis
conference location
Sevilla, Spain
conference dates
2005-06-26 - 2005-07-01
external identifiers
  • wos:000239545000132
  • scopus:33745857349
ISSN
0168-583X
DOI
10.1016/j.nimb.2006.03.046
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Nuclear Physics (Faculty of Technology) (011013007)
id
6318833f-cf04-49c5-91e6-bd918b4af69b (old id 398268)
date added to LUP
2016-04-01 16:18:19
date last changed
2021-02-17 05:39:48
@inproceedings{6318833f-cf04-49c5-91e6-bd918b4af69b,
  abstract     = {Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 degrees C did not alter the composition at the interface except small amount Co diffusion into Si. Annealing at 800 degrees C promotes the evaporation of the oxides from the interface and, as a result, clean CoSi2 films were formed. Although the interface appeared to be sharp within the RBS resolution after high temperature annealing, the surface topography was relatively rough with varying size of crystal grains. (c) 2006 Elsevier B.V. All rights reserved.},
  author       = {Joensson, C T and Maximov, Ivan and Whitlow, Harry J and Shutthanandan, V. and Saraf, L. and McCready, D. E. and Arey, B. W. and Zhang, Y. and Thevuthasan, S.},
  booktitle    = {Ion Beam Analysis - Proceedings of the Seventeenth International Conference on Ion Beam Analysis (Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms)},
  issn         = {0168-583X},
  language     = {eng},
  pages        = {532--535},
  publisher    = {Elsevier},
  title        = {Synthesis and characterization of cobalt silicide films on silicon},
  url          = {http://dx.doi.org/10.1016/j.nimb.2006.03.046},
  doi          = {10.1016/j.nimb.2006.03.046},
  volume       = {249},
  year         = {2006},
}