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Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures

Bussone, Genziana ; Dimakis, Emmanouil ; Grifone, Raphael ; Biermanns, Andreas ; Tahraoui, Abbes ; Carbone, Dina LU ; Geelhaar, Lutz ; Schülli, Tobias U. and Pietsch, Ullrich (2014) In Physica Status Solidi - Rapid Research Letters 8(12). p.1007-1010
Abstract

Polymers such as benzocyclobutene are commonly used as embedding materials for semiconductor nanostructures. During the curing process of the polymer up to 250 °C, a significant impact of strain can be induced on the embedded semiconductor material due to different thermal expansion coefficients. This strain has been revealed by X-ray diffraction in free-standing GaAs nanowires grown on a silicon substrate, embedded in a polymer matrix. It will be shown that this strain is released during the X-ray irradiation if additionally an external static electric field is applied.

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author
; ; ; ; ; ; ; and
publishing date
type
Contribution to journal
publication status
published
keywords
Benzocyclobutene, Embedded semiconductor nanostructures, GaAs nanowires, Polymer matrix, Strain, X-ray diffraction
in
Physica Status Solidi - Rapid Research Letters
volume
8
issue
12
pages
4 pages
publisher
John Wiley & Sons Inc.
external identifiers
  • scopus:84916932338
ISSN
1862-6254
DOI
10.1002/pssr.201409346
language
English
LU publication?
no
additional info
Publisher Copyright: © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
id
3bcbb2c1-1aac-4d77-bc79-a1beda76a920
date added to LUP
2021-12-15 12:00:30
date last changed
2022-02-02 02:08:43
@article{3bcbb2c1-1aac-4d77-bc79-a1beda76a920,
  abstract     = {{<p>Polymers such as benzocyclobutene are commonly used as embedding materials for semiconductor nanostructures. During the curing process of the polymer up to 250 °C, a significant impact of strain can be induced on the embedded semiconductor material due to different thermal expansion coefficients. This strain has been revealed by X-ray diffraction in free-standing GaAs nanowires grown on a silicon substrate, embedded in a polymer matrix. It will be shown that this strain is released during the X-ray irradiation if additionally an external static electric field is applied.</p>}},
  author       = {{Bussone, Genziana and Dimakis, Emmanouil and Grifone, Raphael and Biermanns, Andreas and Tahraoui, Abbes and Carbone, Dina and Geelhaar, Lutz and Schülli, Tobias U. and Pietsch, Ullrich}},
  issn         = {{1862-6254}},
  keywords     = {{Benzocyclobutene; Embedded semiconductor nanostructures; GaAs nanowires; Polymer matrix; Strain; X-ray diffraction}},
  language     = {{eng}},
  month        = {{12}},
  number       = {{12}},
  pages        = {{1007--1010}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Physica Status Solidi - Rapid Research Letters}},
  title        = {{Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures}},
  url          = {{http://dx.doi.org/10.1002/pssr.201409346}},
  doi          = {{10.1002/pssr.201409346}},
  volume       = {{8}},
  year         = {{2014}},
}