Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures
(2014) In Physica Status Solidi - Rapid Research Letters 8(12). p.1007-1010- Abstract
Polymers such as benzocyclobutene are commonly used as embedding materials for semiconductor nanostructures. During the curing process of the polymer up to 250 °C, a significant impact of strain can be induced on the embedded semiconductor material due to different thermal expansion coefficients. This strain has been revealed by X-ray diffraction in free-standing GaAs nanowires grown on a silicon substrate, embedded in a polymer matrix. It will be shown that this strain is released during the X-ray irradiation if additionally an external static electric field is applied.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3bcbb2c1-1aac-4d77-bc79-a1beda76a920
- author
- Bussone, Genziana ; Dimakis, Emmanouil ; Grifone, Raphael ; Biermanns, Andreas ; Tahraoui, Abbes ; Carbone, Dina LU ; Geelhaar, Lutz ; Schülli, Tobias U. and Pietsch, Ullrich
- publishing date
- 2014-12-01
- type
- Contribution to journal
- publication status
- published
- keywords
- Benzocyclobutene, Embedded semiconductor nanostructures, GaAs nanowires, Polymer matrix, Strain, X-ray diffraction
- in
- Physica Status Solidi - Rapid Research Letters
- volume
- 8
- issue
- 12
- pages
- 4 pages
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- scopus:84916932338
- ISSN
- 1862-6254
- DOI
- 10.1002/pssr.201409346
- language
- English
- LU publication?
- no
- additional info
- Publisher Copyright: © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- id
- 3bcbb2c1-1aac-4d77-bc79-a1beda76a920
- date added to LUP
- 2021-12-15 12:00:30
- date last changed
- 2022-02-02 02:08:43
@article{3bcbb2c1-1aac-4d77-bc79-a1beda76a920, abstract = {{<p>Polymers such as benzocyclobutene are commonly used as embedding materials for semiconductor nanostructures. During the curing process of the polymer up to 250 °C, a significant impact of strain can be induced on the embedded semiconductor material due to different thermal expansion coefficients. This strain has been revealed by X-ray diffraction in free-standing GaAs nanowires grown on a silicon substrate, embedded in a polymer matrix. It will be shown that this strain is released during the X-ray irradiation if additionally an external static electric field is applied.</p>}}, author = {{Bussone, Genziana and Dimakis, Emmanouil and Grifone, Raphael and Biermanns, Andreas and Tahraoui, Abbes and Carbone, Dina and Geelhaar, Lutz and Schülli, Tobias U. and Pietsch, Ullrich}}, issn = {{1862-6254}}, keywords = {{Benzocyclobutene; Embedded semiconductor nanostructures; GaAs nanowires; Polymer matrix; Strain; X-ray diffraction}}, language = {{eng}}, month = {{12}}, number = {{12}}, pages = {{1007--1010}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Physica Status Solidi - Rapid Research Letters}}, title = {{Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures}}, url = {{http://dx.doi.org/10.1002/pssr.201409346}}, doi = {{10.1002/pssr.201409346}}, volume = {{8}}, year = {{2014}}, }