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Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors

Karimi, Mohammad LU ; Jain, Vishal LU ; Heurlin, Magnus LU ; Nowzari, Ali LU ; Hussain, Laiq LU ; Lindgren, David LU ; Stehr, Jan Eric ; Buyanova, Irina A. ; Gustafsson, Anders LU orcid and Samuelson, Lars LU , et al. (2017) In Nano Letters 17(6). p.3356-3362
Abstract
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n+–i–n+ InP nanowires periodically ordered in arrays. The nanowires were grown by metal–organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved... (More)
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n+–i–n+ InP nanowires periodically ordered in arrays. The nanowires were grown by metal–organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiOx/ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
17
issue
6
pages
3356 - 3362
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:28535059
  • scopus:85020825146
  • wos:000403631600005
ISSN
1530-6992
DOI
10.1021/acs.nanolett.6b05114
language
English
LU publication?
yes
id
3e3bdc9e-c90d-4ab1-b1b2-59d7c3845588
date added to LUP
2017-06-01 17:46:31
date last changed
2024-11-26 11:45:42
@article{3e3bdc9e-c90d-4ab1-b1b2-59d7c3845588,
  abstract     = {{The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n+–i–n+ InP nanowires periodically ordered in arrays. The nanowires were grown by metal–organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiOx/ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors.}},
  author       = {{Karimi, Mohammad and Jain, Vishal and Heurlin, Magnus and Nowzari, Ali and Hussain, Laiq and Lindgren, David and Stehr, Jan Eric and Buyanova, Irina A. and Gustafsson, Anders and Samuelson, Lars and Borgström, Magnus and Pettersson, Håkan}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{6}},
  pages        = {{3356--3362}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors}},
  url          = {{https://lup.lub.lu.se/search/files/70742380/Post_print_author_manuscript_Karimi_infrared_photodetector_NanoLett.pdf}},
  doi          = {{10.1021/acs.nanolett.6b05114}},
  volume       = {{17}},
  year         = {{2017}},
}