Advanced

Control and understanding of kink formation in InAs-InP heterostructure nanowires.

Fahlvik Svensson, Sofia LU ; Jeppesen, Sören LU ; Thelander, Claes LU ; Samuelson, Lars LU ; Linke, Heiner LU and Dick Thelander, Kimberly LU (2013) In Nanotechnology 24(34).
Abstract
Nanowire heterostructures are of special interest for band structure engineering due to an expanded range of defect-free material combinations. However, the higher degree of freedom in nanowire heterostructure growth comes at the expense of challenges related to nanowire-seed particle interactions, such as undesired composition, grading and kink formation. To better understand the mechanisms of kink formation in nanowires, we here present a detailed study of the dependence of heterostructure nanowire morphology on indium pressure, nanowire diameter, and nanowire density. We investigate InAs-InP-InAs heterostructure nanowires grown with chemical beam epitaxy, which is a material system that allows for very abrupt heterointerfaces. Our... (More)
Nanowire heterostructures are of special interest for band structure engineering due to an expanded range of defect-free material combinations. However, the higher degree of freedom in nanowire heterostructure growth comes at the expense of challenges related to nanowire-seed particle interactions, such as undesired composition, grading and kink formation. To better understand the mechanisms of kink formation in nanowires, we here present a detailed study of the dependence of heterostructure nanowire morphology on indium pressure, nanowire diameter, and nanowire density. We investigate InAs-InP-InAs heterostructure nanowires grown with chemical beam epitaxy, which is a material system that allows for very abrupt heterointerfaces. Our observations indicate that the critical parameter for kink formation is the availability of indium, and that the resulting morphology is also highly dependent on the length of the InP segment. It is shown that kinking is associated with the formation of an inclined facet at the interface between InP and InAs, which destabilizes the growth and leads to a change in growth direction. By careful tuning of the growth parameters, it is possible to entirely suppress the formation of this inclined facet and thereby kinking at the heterointerface. Our results also indicate the possibility of producing controllably kinked nanowires with a high yield. (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
24
issue
34
article number
345601
publisher
IOP Publishing
external identifiers
  • wos:000322642900011
  • pmid:23900037
  • scopus:84881189306
  • pmid:23900037
ISSN
0957-4484
DOI
10.1088/0957-4484/24/34/345601
language
English
LU publication?
yes
id
c82443a4-7f00-4ef7-b768-205f715e0736 (old id 4006405)
date added to LUP
2016-04-01 11:04:37
date last changed
2020-08-05 01:40:38
@article{c82443a4-7f00-4ef7-b768-205f715e0736,
  abstract     = {Nanowire heterostructures are of special interest for band structure engineering due to an expanded range of defect-free material combinations. However, the higher degree of freedom in nanowire heterostructure growth comes at the expense of challenges related to nanowire-seed particle interactions, such as undesired composition, grading and kink formation. To better understand the mechanisms of kink formation in nanowires, we here present a detailed study of the dependence of heterostructure nanowire morphology on indium pressure, nanowire diameter, and nanowire density. We investigate InAs-InP-InAs heterostructure nanowires grown with chemical beam epitaxy, which is a material system that allows for very abrupt heterointerfaces. Our observations indicate that the critical parameter for kink formation is the availability of indium, and that the resulting morphology is also highly dependent on the length of the InP segment. It is shown that kinking is associated with the formation of an inclined facet at the interface between InP and InAs, which destabilizes the growth and leads to a change in growth direction. By careful tuning of the growth parameters, it is possible to entirely suppress the formation of this inclined facet and thereby kinking at the heterointerface. Our results also indicate the possibility of producing controllably kinked nanowires with a high yield.},
  author       = {Fahlvik Svensson, Sofia and Jeppesen, Sören and Thelander, Claes and Samuelson, Lars and Linke, Heiner and Dick Thelander, Kimberly},
  issn         = {0957-4484},
  language     = {eng},
  number       = {34},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Control and understanding of kink formation in InAs-InP heterostructure nanowires.},
  url          = {http://dx.doi.org/10.1088/0957-4484/24/34/345601},
  doi          = {10.1088/0957-4484/24/34/345601},
  volume       = {24},
  year         = {2013},
}