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Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Gas, Katarzyna ; Sadowski, Janusz LU ; Kasama, Takeshi ; Siusys, Aloyzas ; Zaleszczyk, Wojciech ; Wojciechowski, Tomasz ; Morhange, Jean-François ; Altintas, Abdulmenaf and Xu, Hongqi LU (2013) In Nanoscale 5(16). p.7410-7418
Abstract
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman

scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping

level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual... (More)
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman

scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping

level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with

the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires. (Less)
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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowires, molecular beam epitaxy, spintronics
in
Nanoscale
volume
5
issue
16
pages
7410 - 7418
publisher
Royal Society of Chemistry
external identifiers
  • wos:000322315600040
  • scopus:84880864291
ISSN
2040-3372
DOI
10.1039/c3nr01145c
language
English
LU publication?
yes
id
4a255946-a28c-4886-a91e-7f5d03fc3d16 (old id 4023136)
date added to LUP
2016-04-01 10:05:59
date last changed
2023-08-30 17:31:41
@article{4a255946-a28c-4886-a91e-7f5d03fc3d16,
  abstract     = {{Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman<br/><br>
scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping<br/><br>
level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with<br/><br>
the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.}},
  author       = {{Gas, Katarzyna and Sadowski, Janusz and Kasama, Takeshi and Siusys, Aloyzas and Zaleszczyk, Wojciech and Wojciechowski, Tomasz and Morhange, Jean-François and Altintas, Abdulmenaf and Xu, Hongqi}},
  issn         = {{2040-3372}},
  keywords     = {{Nanowires; molecular beam epitaxy; spintronics}},
  language     = {{eng}},
  number       = {{16}},
  pages        = {{7410--7418}},
  publisher    = {{Royal Society of Chemistry}},
  series       = {{Nanoscale}},
  title        = {{Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates}},
  url          = {{http://dx.doi.org/10.1039/c3nr01145c}},
  doi          = {{10.1039/c3nr01145c}},
  volume       = {{5}},
  year         = {{2013}},
}