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Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Yastrubchak, Oksana ; Sadowski, Janusz LU ; Krzyzanowska, Hanna ; Gluba, Lukasz ; Zuk, Jerzy ; Domagala, Jaroslaw ; Andrearczyk, Tomasz and Wosinski, Tadeusz (2013) In Applied Physics Reviews 114(5). p.7-053710
Abstract
Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the

layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery,respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in... (More)
Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the

layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery,respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free hole concentration. The experimental results are consistent with the valence-band origin of

mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor. (Less)
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organization
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Contribution to journal
publication status
published
subject
keywords
ferromagnetic semiconductors, molecular beam epitaxy, spintronics
in
Applied Physics Reviews
volume
114
issue
5
pages
7 - 053710
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000322912900043
  • scopus:84882288371
ISSN
1931-9401
DOI
10.1063/1.4817420
language
English
LU publication?
yes
id
a65afe11-a21e-4bee-a746-0da76d8ea8c7 (old id 4023149)
date added to LUP
2016-04-01 10:34:40
date last changed
2020-01-12 04:26:38
@article{a65afe11-a21e-4bee-a746-0da76d8ea8c7,
  abstract     = {Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the<br/><br>
layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery,respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free hole concentration. The experimental results are consistent with the valence-band origin of<br/><br>
mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.},
  author       = {Yastrubchak, Oksana and Sadowski, Janusz and Krzyzanowska, Hanna and Gluba, Lukasz and Zuk, Jerzy and Domagala, Jaroslaw and Andrearczyk, Tomasz and Wosinski, Tadeusz},
  issn         = {1931-9401},
  language     = {eng},
  number       = {5},
  pages        = {7--053710},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Reviews},
  title        = {Electronic- and band-structure evolution in low-doped (Ga,Mn)As},
  url          = {http://dx.doi.org/10.1063/1.4817420},
  doi          = {10.1063/1.4817420},
  volume       = {114},
  year         = {2013},
}