Electronic- and band-structure evolution in low-doped (Ga,Mn)As
(2013) In Applied Physics Reviews 114(5). p.7-053710- Abstract
- Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the
layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery,respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in... (More) - Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the
layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery,respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free hole concentration. The experimental results are consistent with the valence-band origin of
mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4023149
- author
- Yastrubchak, Oksana ; Sadowski, Janusz LU ; Krzyzanowska, Hanna ; Gluba, Lukasz ; Zuk, Jerzy ; Domagala, Jaroslaw ; Andrearczyk, Tomasz and Wosinski, Tadeusz
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- ferromagnetic semiconductors, molecular beam epitaxy, spintronics
- in
- Applied Physics Reviews
- volume
- 114
- issue
- 5
- pages
- 7 - 053710
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000322912900043
- scopus:84882288371
- ISSN
- 1931-9401
- DOI
- 10.1063/1.4817420
- language
- English
- LU publication?
- yes
- id
- a65afe11-a21e-4bee-a746-0da76d8ea8c7 (old id 4023149)
- date added to LUP
- 2016-04-01 10:34:40
- date last changed
- 2020-11-22 04:05:25
@article{a65afe11-a21e-4bee-a746-0da76d8ea8c7,
abstract = {Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the<br/><br>
layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery,respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free hole concentration. The experimental results are consistent with the valence-band origin of<br/><br>
mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.},
author = {Yastrubchak, Oksana and Sadowski, Janusz and Krzyzanowska, Hanna and Gluba, Lukasz and Zuk, Jerzy and Domagala, Jaroslaw and Andrearczyk, Tomasz and Wosinski, Tadeusz},
issn = {1931-9401},
language = {eng},
number = {5},
pages = {7--053710},
publisher = {American Institute of Physics (AIP)},
series = {Applied Physics Reviews},
title = {Electronic- and band-structure evolution in low-doped (Ga,Mn)As},
url = {http://dx.doi.org/10.1063/1.4817420},
doi = {10.1063/1.4817420},
volume = {114},
year = {2013},
}