Nanowire growth and dopants studied by cross-sectional scanning tunnelling microscopy
(2006) In Nanotechnology 17(11). p.362-368- Abstract
- Using a crystalline embedding scheme it has recently become possible to study free-standing III - V nanowires with cross-sectional scanning tunnelling microscopy (XSTM). In the present paper we discuss how this novel method can be used for direct atomically resolved imaging of the interior of nanowires. We will focus in particular on two areas where this method provides unique possibilities. First we discuss the growth of the nanowire at the substrate as studied by XSTM and determine the facets of the nanowire growth on the surface and at the onset of free-standing nanowire growth. Second, we demonstrate how individual defects can be studied inside the wires, indicating a unique way for investigating dopant structures and concentrations in... (More)
- Using a crystalline embedding scheme it has recently become possible to study free-standing III - V nanowires with cross-sectional scanning tunnelling microscopy (XSTM). In the present paper we discuss how this novel method can be used for direct atomically resolved imaging of the interior of nanowires. We will focus in particular on two areas where this method provides unique possibilities. First we discuss the growth of the nanowire at the substrate as studied by XSTM and determine the facets of the nanowire growth on the surface and at the onset of free-standing nanowire growth. Second, we demonstrate how individual defects can be studied inside the wires, indicating a unique way for investigating dopant structures and concentrations in nanowires. We identify a carbon defect/dopant in the nanowire positioned on arsenic sites and establish quantitative limits on the defect density in the nanowires. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/405915
- author
- Mikkelsen, Anders LU ; Sköld, Niklas LU ; Ouattara, Lassana LU and Lundgren, Edvin LU
- organization
- publishing date
- 2006
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 17
- issue
- 11
- pages
- 362 - 368
- publisher
- IOP Publishing
- external identifiers
-
- wos:000238250300023
- scopus:33744546661
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/17/11/S22
- language
- English
- LU publication?
- yes
- id
- a2fdc9b2-f36d-40c1-9a22-8d706dbb23a8 (old id 405915)
- date added to LUP
- 2016-04-01 11:52:31
- date last changed
- 2022-01-26 19:31:39
@article{a2fdc9b2-f36d-40c1-9a22-8d706dbb23a8,
abstract = {{Using a crystalline embedding scheme it has recently become possible to study free-standing III - V nanowires with cross-sectional scanning tunnelling microscopy (XSTM). In the present paper we discuss how this novel method can be used for direct atomically resolved imaging of the interior of nanowires. We will focus in particular on two areas where this method provides unique possibilities. First we discuss the growth of the nanowire at the substrate as studied by XSTM and determine the facets of the nanowire growth on the surface and at the onset of free-standing nanowire growth. Second, we demonstrate how individual defects can be studied inside the wires, indicating a unique way for investigating dopant structures and concentrations in nanowires. We identify a carbon defect/dopant in the nanowire positioned on arsenic sites and establish quantitative limits on the defect density in the nanowires.}},
author = {{Mikkelsen, Anders and Sköld, Niklas and Ouattara, Lassana and Lundgren, Edvin}},
issn = {{0957-4484}},
language = {{eng}},
number = {{11}},
pages = {{362--368}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Nanowire growth and dopants studied by cross-sectional scanning tunnelling microscopy}},
url = {{http://dx.doi.org/10.1088/0957-4484/17/11/S22}},
doi = {{10.1088/0957-4484/17/11/S22}},
volume = {{17}},
year = {{2006}},
}