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Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

Marlow, C. A. ; Taylor, R. P. ; Martin, T. P. ; Scannell, B. C. ; Linke, H. ; Fairbanks, M. S. ; Hall, G. D. R. ; Shorubalko, I. ; Samuelson, Lars LU and Fromhold, T. M. , et al. (2006) In Physical Review B (Condensed Matter and Materials Physics) 73(19).
Abstract
We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events.
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
73
issue
19
article number
195318
publisher
American Physical Society
external identifiers
  • wos:000237950400086
  • scopus:33646720109
ISSN
1098-0121
DOI
10.1103/PhysRevB.73.195318
language
English
LU publication?
yes
id
064ab8f1-02c9-4a35-b0f8-90416f8fc12a (old id 407332)
date added to LUP
2016-04-01 16:53:59
date last changed
2020-01-12 19:50:57
@article{064ab8f1-02c9-4a35-b0f8-90416f8fc12a,
  abstract     = {We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events.},
  author       = {Marlow, C. A. and Taylor, R. P. and Martin, T. P. and Scannell, B. C. and Linke, H. and Fairbanks, M. S. and Hall, G. D. R. and Shorubalko, I. and Samuelson, Lars and Fromhold, T. M. and Brown, C. V. and Hackens, B. and Faniel, S. and Gustin, C. and Bayot, V. and Wallart, X. and Bollaert, S. and Cappy, A.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {19},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices},
  url          = {http://dx.doi.org/10.1103/PhysRevB.73.195318},
  doi          = {10.1103/PhysRevB.73.195318},
  volume       = {73},
  year         = {2006},
}