Structural investigation of GaInP nanowires using X-ray diffraction
(2013) In Thin Solid Films 543. p.100-105- Abstract
- In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within... (More)
- In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements. (C) 2013 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4106380
- author
- Kriegner, D. ; Persson, J. M. ; Etzelstorfer, T. ; Jacobsson, Daniel LU ; Wallentin, Jesper LU ; Wagner, J. B. ; Deppert, Knut LU ; Borgström, Magnus LU and Stangl, J.
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanowires, X-ray diffraction, III-V semiconductors
- in
- Thin Solid Films
- volume
- 543
- pages
- 100 - 105
- publisher
- Elsevier
- external identifiers
-
- wos:000324049500023
- scopus:84883192097
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2013.02.112
- language
- English
- LU publication?
- yes
- id
- 77edab9d-c96f-482d-9461-2102adc51c37 (old id 4106380)
- date added to LUP
- 2016-04-01 13:43:01
- date last changed
- 2023-09-03 03:49:51
@article{77edab9d-c96f-482d-9461-2102adc51c37, abstract = {{In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements. (C) 2013 Elsevier B.V. All rights reserved.}}, author = {{Kriegner, D. and Persson, J. M. and Etzelstorfer, T. and Jacobsson, Daniel and Wallentin, Jesper and Wagner, J. B. and Deppert, Knut and Borgström, Magnus and Stangl, J.}}, issn = {{0040-6090}}, keywords = {{Nanowires; X-ray diffraction; III-V semiconductors}}, language = {{eng}}, pages = {{100--105}}, publisher = {{Elsevier}}, series = {{Thin Solid Films}}, title = {{Structural investigation of GaInP nanowires using X-ray diffraction}}, url = {{http://dx.doi.org/10.1016/j.tsf.2013.02.112}}, doi = {{10.1016/j.tsf.2013.02.112}}, volume = {{543}}, year = {{2013}}, }