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Effects of the Spin-Orbit Interaction on Transport and Optical Properties of III-V Semiconductor Quantum Wells

Froltsov, Vladimir LU (2000)
Abstract
Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically.



It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes.



Spin-orbit effects on the resonant Raman scattering from intrasubband electronic excitations have been investigated. We demonstrate that the spin-orbit interaction leads to the so-called "spin-spin" and "spin-charge" quantum interference of Raman amplitudes. The... (More)
Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically.



It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes.



Spin-orbit effects on the resonant Raman scattering from intrasubband electronic excitations have been investigated. We demonstrate that the spin-orbit interaction leads to the so-called "spin-spin" and "spin-charge" quantum interference of Raman amplitudes. The interference manifests itself in an asymmetry of the spin-flip and non-spin-flip Raman spectra with respect to the directions of circular polarizations of the incident and the scattered photons. In the case of resonance with a heavy-hole subband, the polarization asymmetry of the spin-flip spectrum can be detected only if the heavy and light-hole subbands are hybridized. Experimental conditions and selection rules for observation of the spin-charge interference have been analysed.



Finally, we have studied the spatial and temporal evolution of an inhomogeneous spin distribution created by a focused laser pulse in a magnetic field applied parallel to a quantum well. Instead of the conventional exponential relaxation typical of a homogeneous spin distribution, we have found that the shape of the spin packet oscillates in time and space, as a result of the interplay between the spin-orbit interaction and the magnetic field. The amplitude of the oscillations depends on the direction, as well as on the strength of the magnetic field. (Less)
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author
opponent
  • Eriksson, Olle
organization
publishing date
type
Thesis
publication status
published
subject
keywords
spin-orbit interaction, quantum well, III-V, Raman scattering, magnetoresistance, weak localization, spin distribution, magnetic field, Fysik, Physics, Fysicumarkivet A:2000:Froltsov, Halvledarfysik, Semiconductory physics, semiconductor
pages
90 pages
publisher
Division of Solid State Theory, Department of Physics, University of Lund, Sölvegatan 14A, SE-223 62 Lund
defense location
Sal F, Department of Physics
defense date
2000-10-19 13:15
ISBN
91-7874-099-1
language
English
LU publication?
yes
id
5b0c1849-5c48-40ca-abd7-223863c6624e (old id 41101)
date added to LUP
2007-07-31 08:56:06
date last changed
2016-09-19 08:45:12
@phdthesis{5b0c1849-5c48-40ca-abd7-223863c6624e,
  abstract     = {Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically.<br/><br>
<br/><br>
It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes.<br/><br>
<br/><br>
Spin-orbit effects on the resonant Raman scattering from intrasubband electronic excitations have been investigated. We demonstrate that the spin-orbit interaction leads to the so-called "spin-spin" and "spin-charge" quantum interference of Raman amplitudes. The interference manifests itself in an asymmetry of the spin-flip and non-spin-flip Raman spectra with respect to the directions of circular polarizations of the incident and the scattered photons. In the case of resonance with a heavy-hole subband, the polarization asymmetry of the spin-flip spectrum can be detected only if the heavy and light-hole subbands are hybridized. Experimental conditions and selection rules for observation of the spin-charge interference have been analysed.<br/><br>
<br/><br>
Finally, we have studied the spatial and temporal evolution of an inhomogeneous spin distribution created by a focused laser pulse in a magnetic field applied parallel to a quantum well. Instead of the conventional exponential relaxation typical of a homogeneous spin distribution, we have found that the shape of the spin packet oscillates in time and space, as a result of the interplay between the spin-orbit interaction and the magnetic field. The amplitude of the oscillations depends on the direction, as well as on the strength of the magnetic field.},
  author       = {Froltsov, Vladimir},
  isbn         = {91-7874-099-1},
  keyword      = {spin-orbit interaction,quantum well,III-V,Raman scattering,magnetoresistance,weak localization,spin distribution,magnetic field,Fysik,Physics,Fysicumarkivet A:2000:Froltsov,Halvledarfysik,Semiconductory physics,semiconductor},
  language     = {eng},
  pages        = {90},
  publisher    = {Division of Solid State Theory, Department of Physics, University of Lund, Sölvegatan 14A, SE-223 62 Lund},
  school       = {Lund University},
  title        = {Effects of the Spin-Orbit Interaction on Transport and Optical Properties of III-V Semiconductor Quantum Wells},
  year         = {2000},
}