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High-k oxides on InAs 100 and 111B surfaces

Lind, Erik LU ; Wu, Jun LU and Wernersson, Lars-Erik LU (2012) 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS) In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices 45(3). p.61-67
Abstract
Al2O3 and HfO2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO2 and Al2O3 show similar D-it profiles, with a D-it minimum around 2x10(12) eV(-1)cm(-2).
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
volume
45
issue
3
pages
61 - 67
publisher
Electrochemical Society
conference name
5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS)
external identifiers
  • wos:000325405800007
  • scopus:84869013564
ISSN
1938-5862
1938-6737
DOI
10.1149/1.3700872
language
English
LU publication?
yes
id
d6d2e013-00da-46c2-ba71-b2755aa1ad2c (old id 4171663)
date added to LUP
2013-11-26 15:35:50
date last changed
2017-01-01 03:23:20
@inproceedings{d6d2e013-00da-46c2-ba71-b2755aa1ad2c,
  abstract     = {Al2O3 and HfO2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO2 and Al2O3 show similar D-it profiles, with a D-it minimum around 2x10(12) eV(-1)cm(-2).},
  author       = {Lind, Erik and Wu, Jun and Wernersson, Lars-Erik},
  booktitle    = {Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices},
  issn         = {1938-5862},
  language     = {eng},
  number       = {3},
  pages        = {61--67},
  publisher    = {Electrochemical Society},
  title        = {High-k oxides on InAs 100 and 111B surfaces},
  url          = {http://dx.doi.org/10.1149/1.3700872},
  volume       = {45},
  year         = {2012},
}