High-k oxides on InAs 100 and 111B surfaces
(2012) 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS) 45(3). p.61-67- Abstract
- Al2O3 and HfO2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO2 and Al2O3 show similar D-it profiles, with a D-it minimum around 2x10(12) eV(-1)cm(-2).
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4171663
- author
- Lind, Erik LU ; Wu, Jun LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2012
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
- volume
- 45
- issue
- 3
- pages
- 61 - 67
- publisher
- Electrochemical Society
- conference name
- 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS)
- conference dates
- 2012-05-06 - 2012-05-10
- external identifiers
-
- wos:000325405800007
- scopus:84869013564
- ISSN
- 1938-6737
- 1938-5862
- DOI
- 10.1149/1.3700872
- language
- English
- LU publication?
- yes
- id
- d6d2e013-00da-46c2-ba71-b2755aa1ad2c (old id 4171663)
- date added to LUP
- 2016-04-01 10:13:25
- date last changed
- 2024-10-06 23:29:58
@inproceedings{d6d2e013-00da-46c2-ba71-b2755aa1ad2c, abstract = {{Al2O3 and HfO2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO2 and Al2O3 show similar D-it profiles, with a D-it minimum around 2x10(12) eV(-1)cm(-2).}}, author = {{Lind, Erik and Wu, Jun and Wernersson, Lars-Erik}}, booktitle = {{Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices}}, issn = {{1938-6737}}, language = {{eng}}, number = {{3}}, pages = {{61--67}}, publisher = {{Electrochemical Society}}, title = {{High-k oxides on InAs 100 and 111B surfaces}}, url = {{http://dx.doi.org/10.1149/1.3700872}}, doi = {{10.1149/1.3700872}}, volume = {{45}}, year = {{2012}}, }