Morphology and composition controlled GaxIn1-xSb nanowires: understanding ternary antimonide growth.
Gorji, Sepideh LU ; Ek, Martin LU
; Ghasemi, Masoomeh
LU
; Caroff, Philippe
; Johansson, Jonas
LU
and Dick Thelander, Kimberly
LU
(2014)
In Nanoscale
6(2).
p.1086-1092
- Abstract
- Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is extensively studied over the entire compositional range (from 3 to ∼100% of In). Second, the obtained compositional results are explained by a kinetic model, suggesting an Arrhenius-type behavior for the trimethylindium (TMIn) precursor. Third, the particle composition is fully investigated and the implications for growth are discussed with... (More)
- Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is extensively studied over the entire compositional range (from 3 to ∼100% of In). Second, the obtained compositional results are explained by a kinetic model, suggesting an Arrhenius-type behavior for the trimethylindium (TMIn) precursor. Third, the particle composition is fully investigated and the implications for growth are discussed with reference to our calculated Au-Ga-In phase diagram. Fourth, a mechanism is presented to explain the temperature-dependent morphology and radial growth of the GaxIn1-xSb nanowires. Finally, we demonstrate homogeneous compositions in both axial and radial directions and the nanowires remain entirely twin-free zinc blende. The understanding gained from this study together with the potential to precisely tailor the band gap, wavelength and carrier mobilities allows fabrication of various GaxIn1-xSb-based nanowire devices. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4225324
- author
- Gorji, Sepideh
LU
; Ek, Martin
LU
; Ghasemi, Masoomeh
LU
; Caroff, Philippe
; Johansson, Jonas
LU
and Dick Thelander, Kimberly
LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanoscale
- volume
- 6
- issue
- 2
- pages
- 1086 - 1092
- publisher
- Royal Society of Chemistry
- external identifiers
-
- wos:000328892300060
- pmid:24296789
- scopus:84890828568
- pmid:24296789
- ISSN
- 2040-3372
- DOI
- 10.1039/c3nr05079c
- language
- English
- LU publication?
- yes
- id
- e286ec4d-a61f-49e9-a481-b7956aa28849 (old id 4225324)
- date added to LUP
- 2016-04-01 10:43:46
- date last changed
- 2023-08-31 10:01:33
@article{e286ec4d-a61f-49e9-a481-b7956aa28849,
abstract = {{Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is extensively studied over the entire compositional range (from 3 to ∼100% of In). Second, the obtained compositional results are explained by a kinetic model, suggesting an Arrhenius-type behavior for the trimethylindium (TMIn) precursor. Third, the particle composition is fully investigated and the implications for growth are discussed with reference to our calculated Au-Ga-In phase diagram. Fourth, a mechanism is presented to explain the temperature-dependent morphology and radial growth of the GaxIn1-xSb nanowires. Finally, we demonstrate homogeneous compositions in both axial and radial directions and the nanowires remain entirely twin-free zinc blende. The understanding gained from this study together with the potential to precisely tailor the band gap, wavelength and carrier mobilities allows fabrication of various GaxIn1-xSb-based nanowire devices.}},
author = {{Gorji, Sepideh and Ek, Martin and Ghasemi, Masoomeh and Caroff, Philippe and Johansson, Jonas and Dick Thelander, Kimberly}},
issn = {{2040-3372}},
language = {{eng}},
number = {{2}},
pages = {{1086--1092}},
publisher = {{Royal Society of Chemistry}},
series = {{Nanoscale}},
title = {{Morphology and composition controlled GaxIn1-xSb nanowires: understanding ternary antimonide growth.}},
url = {{http://dx.doi.org/10.1039/c3nr05079c}},
doi = {{10.1039/c3nr05079c}},
volume = {{6}},
year = {{2014}},
}