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Morphology and composition controlled GaxIn1-xSb nanowires: understanding ternary antimonide growth.

Gorji, Sepideh LU ; Ek, Martin LU ; Ghasemi, Masoomeh LU ; Caroff, Philippe; Johansson, Jonas LU and Dick Thelander, Kimberly LU (2014) In Nanoscale 6(2). p.1086-1092
Abstract
Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is extensively studied over the entire compositional range (from 3 to ∼100% of In). Second, the obtained compositional results are explained by a kinetic model, suggesting an Arrhenius-type behavior for the trimethylindium (TMIn) precursor. Third, the particle composition is fully investigated and the implications for growth are discussed with... (More)
Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is extensively studied over the entire compositional range (from 3 to ∼100% of In). Second, the obtained compositional results are explained by a kinetic model, suggesting an Arrhenius-type behavior for the trimethylindium (TMIn) precursor. Third, the particle composition is fully investigated and the implications for growth are discussed with reference to our calculated Au-Ga-In phase diagram. Fourth, a mechanism is presented to explain the temperature-dependent morphology and radial growth of the GaxIn1-xSb nanowires. Finally, we demonstrate homogeneous compositions in both axial and radial directions and the nanowires remain entirely twin-free zinc blende. The understanding gained from this study together with the potential to precisely tailor the band gap, wavelength and carrier mobilities allows fabrication of various GaxIn1-xSb-based nanowire devices. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanoscale
volume
6
issue
2
pages
1086 - 1092
publisher
Royal Society of Chemistry
external identifiers
  • wos:000328892300060
  • pmid:24296789
  • scopus:84890828568
ISSN
2040-3372
DOI
10.1039/c3nr05079c
language
English
LU publication?
yes
id
e286ec4d-a61f-49e9-a481-b7956aa28849 (old id 4225324)
date added to LUP
2014-01-09 13:04:09
date last changed
2017-01-01 03:51:06
@article{e286ec4d-a61f-49e9-a481-b7956aa28849,
  abstract     = {Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is extensively studied over the entire compositional range (from 3 to ∼100% of In). Second, the obtained compositional results are explained by a kinetic model, suggesting an Arrhenius-type behavior for the trimethylindium (TMIn) precursor. Third, the particle composition is fully investigated and the implications for growth are discussed with reference to our calculated Au-Ga-In phase diagram. Fourth, a mechanism is presented to explain the temperature-dependent morphology and radial growth of the GaxIn1-xSb nanowires. Finally, we demonstrate homogeneous compositions in both axial and radial directions and the nanowires remain entirely twin-free zinc blende. The understanding gained from this study together with the potential to precisely tailor the band gap, wavelength and carrier mobilities allows fabrication of various GaxIn1-xSb-based nanowire devices.},
  author       = {Gorji, Sepideh and Ek, Martin and Ghasemi, Masoomeh and Caroff, Philippe and Johansson, Jonas and Dick Thelander, Kimberly},
  issn         = {2040-3372},
  language     = {eng},
  number       = {2},
  pages        = {1086--1092},
  publisher    = {Royal Society of Chemistry},
  series       = {Nanoscale},
  title        = {Morphology and composition controlled GaxIn1-xSb nanowires: understanding ternary antimonide growth.},
  url          = {http://dx.doi.org/10.1039/c3nr05079c},
  volume       = {6},
  year         = {2014},
}