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Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices

Nukala, Pavan ; Ahmadi, Majid ; Wei, Yingfen ; Graaf, Sytze De ; Stylianidis, Evgenios ; Chakrabortty, Tuhin ; Matzen, Sylvia ; Zandbergen, Henny W. ; Björling, Alexander LU and Mannix, Dan , et al. (2021) In Science 372(6542). p.630-635
Abstract

Unconventional ferroelectricity exhibited by hafnia-based thin films-robust at nanoscale sizes-presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. We investigated a La0.67Sr0.33MnO3/Hf0.5Zr0.5O2 capacitor interfaced with various top electrodes while performing in situ electrical biasing using atomic-resolution microscopy with direct oxygen imaging as well as with synchrotron nanobeam diffraction. When the top electrode is oxygen reactive, we observe reversible oxygen vacancy migration with electrodes as the source and sink of oxygen and the dielectric layer acting as a fast conduit at millisecond time scales. With nonreactive top electrodes and at longer time... (More)

Unconventional ferroelectricity exhibited by hafnia-based thin films-robust at nanoscale sizes-presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. We investigated a La0.67Sr0.33MnO3/Hf0.5Zr0.5O2 capacitor interfaced with various top electrodes while performing in situ electrical biasing using atomic-resolution microscopy with direct oxygen imaging as well as with synchrotron nanobeam diffraction. When the top electrode is oxygen reactive, we observe reversible oxygen vacancy migration with electrodes as the source and sink of oxygen and the dielectric layer acting as a fast conduit at millisecond time scales. With nonreactive top electrodes and at longer time scales (seconds), the dielectric layer also acts as an oxygen source and sink. Our results show that ferroelectricity in hafnia-based thin films is unmistakably intertwined with oxygen voltammetry.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Science
volume
372
issue
6542
pages
630 - 635
publisher
American Association for the Advancement of Science (AAAS)
external identifiers
  • pmid:33858991
  • scopus:85105509664
ISSN
0036-8075
DOI
10.1126/science.abf3789
language
English
LU publication?
yes
id
428e12f3-92b0-451b-8bc1-9259be57a645
date added to LUP
2021-06-01 17:41:37
date last changed
2024-09-08 18:58:15
@article{428e12f3-92b0-451b-8bc1-9259be57a645,
  abstract     = {{<p>Unconventional ferroelectricity exhibited by hafnia-based thin films-robust at nanoscale sizes-presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. We investigated a La0.67Sr0.33MnO3/Hf0.5Zr0.5O2 capacitor interfaced with various top electrodes while performing in situ electrical biasing using atomic-resolution microscopy with direct oxygen imaging as well as with synchrotron nanobeam diffraction. When the top electrode is oxygen reactive, we observe reversible oxygen vacancy migration with electrodes as the source and sink of oxygen and the dielectric layer acting as a fast conduit at millisecond time scales. With nonreactive top electrodes and at longer time scales (seconds), the dielectric layer also acts as an oxygen source and sink. Our results show that ferroelectricity in hafnia-based thin films is unmistakably intertwined with oxygen voltammetry.</p>}},
  author       = {{Nukala, Pavan and Ahmadi, Majid and Wei, Yingfen and Graaf, Sytze De and Stylianidis, Evgenios and Chakrabortty, Tuhin and Matzen, Sylvia and Zandbergen, Henny W. and Björling, Alexander and Mannix, Dan and Carbone, Dina and Kooi, Bart and Noheda, Beatriz}},
  issn         = {{0036-8075}},
  language     = {{eng}},
  month        = {{05}},
  number       = {{6542}},
  pages        = {{630--635}},
  publisher    = {{American Association for the Advancement of Science (AAAS)}},
  series       = {{Science}},
  title        = {{Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices}},
  url          = {{http://dx.doi.org/10.1126/science.abf3789}},
  doi          = {{10.1126/science.abf3789}},
  volume       = {{372}},
  year         = {{2021}},
}