Advanced

Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors

Carrad, Damon J.; Burke, Adam M.; Lyttleton, Roman W.; Joyce, Hannah J.; Tan, Hark Hoe; Jagadish, Chennupati; Storm, Kristian LU ; Linke, Heiner LU ; Samuelson, Lars LU and Micolich, Adam P. (2014) In Nano Letters 14(1). p.94-100
Abstract
We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
III-V nanowires, polymer electrolytes, electron beam lithography, nanoelectronics
in
Nano Letters
volume
14
issue
1
pages
94 - 100
publisher
The American Chemical Society
external identifiers
  • wos:000329586700016
  • scopus:84892168441
ISSN
1530-6992
DOI
10.1021/nl403299u
language
English
LU publication?
yes
id
ee5afebb-fb99-4aa0-b51d-cd1fe1e0fcaa (old id 4319645)
date added to LUP
2014-02-26 14:05:07
date last changed
2017-08-27 04:35:26
@article{ee5afebb-fb99-4aa0-b51d-cd1fe1e0fcaa,
  abstract     = {We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.},
  author       = {Carrad, Damon J. and Burke, Adam M. and Lyttleton, Roman W. and Joyce, Hannah J. and Tan, Hark Hoe and Jagadish, Chennupati and Storm, Kristian and Linke, Heiner and Samuelson, Lars and Micolich, Adam P.},
  issn         = {1530-6992},
  keyword      = {III-V nanowires,polymer electrolytes,electron beam lithography,nanoelectronics},
  language     = {eng},
  number       = {1},
  pages        = {94--100},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors},
  url          = {http://dx.doi.org/10.1021/nl403299u},
  volume       = {14},
  year         = {2014},
}