How to control SiC BJT with high efficiency?
(2012) 2012 7th International Conference on Integrated Power Electronics Systems (CIPS) p.1-4- Abstract
- SiC Bipolar Junction Transistor has many benefits such as low on-state voltage drop, high switching speed and high maximum operating temperature. However it has one major disadvantage that it needs current to be turned on. This causes an increased power requirement of the driver circuit compared to voltage controlled devices like MOSFETs and IGBTs. The proposed driving concept is based on a verified Darlington typology together with a voltage compensation component which gives a solution to this problem. The proposed driving concept is evaluated by both simulation and experimental results. The investigation of parallel connection of SiC BJT transistors that use the proposed drive concept is also included in this paper.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4351740
- author
- Wang, Luyu LU and Bängtsson, Hans LU
- organization
- publishing date
- 2012
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Darlington typology SiC SiC BJT bipolar junction transistor on-state voltage drop operating temperature switching speed voltage compensation component voltage controlled device
- host publication
- 2012 7th International Conference on Integrated Power Electronics Systems (CIPS 2012)
- pages
- 1 - 4
- conference name
- 2012 7th International Conference on Integrated Power Electronics Systems (CIPS)
- conference location
- Nuremberg, Germany
- conference dates
- 2012-03-06
- external identifiers
-
- scopus:84881113737
- ISBN
- 978-3-8007-3414-6
- language
- English
- LU publication?
- yes
- id
- 50962e7e-d93d-4c56-b452-db65f677f875 (old id 4351740)
- alternative location
- http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6170689
- date added to LUP
- 2016-04-04 14:06:19
- date last changed
- 2022-03-31 21:59:27
@inproceedings{50962e7e-d93d-4c56-b452-db65f677f875, abstract = {{SiC Bipolar Junction Transistor has many benefits such as low on-state voltage drop, high switching speed and high maximum operating temperature. However it has one major disadvantage that it needs current to be turned on. This causes an increased power requirement of the driver circuit compared to voltage controlled devices like MOSFETs and IGBTs. The proposed driving concept is based on a verified Darlington typology together with a voltage compensation component which gives a solution to this problem. The proposed driving concept is evaluated by both simulation and experimental results. The investigation of parallel connection of SiC BJT transistors that use the proposed drive concept is also included in this paper.}}, author = {{Wang, Luyu and Bängtsson, Hans}}, booktitle = {{2012 7th International Conference on Integrated Power Electronics Systems (CIPS 2012)}}, isbn = {{978-3-8007-3414-6}}, keywords = {{Darlington typology SiC SiC BJT bipolar junction transistor on-state voltage drop operating temperature switching speed voltage compensation component voltage controlled device}}, language = {{eng}}, pages = {{1--4}}, title = {{How to control SiC BJT with high efficiency?}}, url = {{http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6170689}}, year = {{2012}}, }