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Realization of single and double axial InSb-GaSb heterostructure nanowires

Gorji, Sepideh LU ; Ek, Martin LU and Dick Thelander, Kimberly LU (2014) In Physica Status Solidi. Rapid Research Letters 8(3). p.269-273
Abstract
Heteroepitaxial growth of III-Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au-seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb-GaSb heterostructures in both directions. The formation properties of the grown nanowires including the compositional change of the particle and the interface sharpness are further discussed. In addition, the decomposition of InSb and GaSb segments and their side facet evolution are explained.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
MOVPE, III-V semiconductors, nanowires, antimonides, heterostructures
in
Physica Status Solidi. Rapid Research Letters
volume
8
issue
3
pages
269 - 273
publisher
John Wiley & Sons
external identifiers
  • wos:000332928600013
  • scopus:84896028505
ISSN
1862-6254
DOI
10.1002/pssr.201308331
language
English
LU publication?
yes
id
ac0dd5d0-9a77-4bb7-8688-bf5216d49296 (old id 4411142)
date added to LUP
2014-04-29 14:51:07
date last changed
2017-01-01 03:38:15
@article{ac0dd5d0-9a77-4bb7-8688-bf5216d49296,
  abstract     = {Heteroepitaxial growth of III-Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au-seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb-GaSb heterostructures in both directions. The formation properties of the grown nanowires including the compositional change of the particle and the interface sharpness are further discussed. In addition, the decomposition of InSb and GaSb segments and their side facet evolution are explained.},
  author       = {Gorji, Sepideh and Ek, Martin and Dick Thelander, Kimberly},
  issn         = {1862-6254},
  keyword      = {MOVPE,III-V semiconductors,nanowires,antimonides,heterostructures},
  language     = {eng},
  number       = {3},
  pages        = {269--273},
  publisher    = {John Wiley & Sons},
  series       = {Physica Status Solidi. Rapid Research Letters},
  title        = {Realization of single and double axial InSb-GaSb heterostructure nanowires},
  url          = {http://dx.doi.org/10.1002/pssr.201308331},
  volume       = {8},
  year         = {2014},
}