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A 65-nm CMOS Area Optimized De-synchronization Flow for sub-V-T Designs

Müller, Christoph LU ; Malkowsky, Steffen LU ; Andersson, Oskar LU ; Mohammadi, Babak LU ; Sparso, Jens and Rodrigues, Joachim LU (2013) IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC) p.380-385
Abstract
This paper proposes a process independent post layout de-synchronization flow implemented in tool command language working on designs operating in the sub-V-T regime. The overhead due to the self-timed operation is combated by introducing full-custom delay elements and latches for a standard 65-nm CMOS process. The flow offers the possibility to adjust granularity based on user requirements. Case studies with different reference designs manifested an average reduction of area and power overhead from 105% to 9% and 174% to 58% in comparison to a full standard cell de-synchronization approach.
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2013 IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC)
pages
380 - 385
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC)
conference dates
2013-10-07 - 2013-10-09
external identifiers
  • wos:000332046100078
  • scopus:84899580503
DOI
10.1109/VLSI-SoC.2013.6673313
language
English
LU publication?
yes
id
98b022a9-0358-48a1-ab79-83f8d15449f7 (old id 4419034)
date added to LUP
2016-04-04 10:17:30
date last changed
2022-01-29 20:04:30
@inproceedings{98b022a9-0358-48a1-ab79-83f8d15449f7,
  abstract     = {{This paper proposes a process independent post layout de-synchronization flow implemented in tool command language working on designs operating in the sub-V-T regime. The overhead due to the self-timed operation is combated by introducing full-custom delay elements and latches for a standard 65-nm CMOS process. The flow offers the possibility to adjust granularity based on user requirements. Case studies with different reference designs manifested an average reduction of area and power overhead from 105% to 9% and 174% to 58% in comparison to a full standard cell de-synchronization approach.}},
  author       = {{Müller, Christoph and Malkowsky, Steffen and Andersson, Oskar and Mohammadi, Babak and Sparso, Jens and Rodrigues, Joachim}},
  booktitle    = {{2013 IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC)}},
  language     = {{eng}},
  pages        = {{380--385}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{A 65-nm CMOS Area Optimized De-synchronization Flow for sub-V-T Designs}},
  url          = {{http://dx.doi.org/10.1109/VLSI-SoC.2013.6673313}},
  doi          = {{10.1109/VLSI-SoC.2013.6673313}},
  year         = {{2013}},
}