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Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires

Paschoal, Waldomiro LU ; Kumar, Sandeep LU ; Jacobsson, Daniel LU orcid ; Johannes, A. ; Jain, Vishal LU ; Canali, C. M. ; Pertsova, A. ; Ronning, C. ; Dick Thelander, Kimberly LU and Samuelson, Lars LU , et al. (2014) In Applied Physics Letters 104(15).
Abstract
We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (similar to 0.0001%) exhibit a low resistance of a few k Omega at 300 K and a 4% positive MR at 1.6 K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several M Omega at 300 K and a large negative MR of 85% at 1.6 K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth... (More)
We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (similar to 0.0001%) exhibit a low resistance of a few k Omega at 300 K and a 4% positive MR at 1.6 K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several M Omega at 300 K and a large negative MR of 85% at 1.6 K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics. (C) 2014 AIP Publishing LLC. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
104
issue
15
article number
153112
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000335145200060
  • scopus:84899622402
ISSN
0003-6951
DOI
10.1063/1.4870423
language
English
LU publication?
yes
id
fa52c5bc-3ed3-49ae-80ca-f3d695cb8017 (old id 4487224)
date added to LUP
2016-04-01 09:53:34
date last changed
2024-10-06 15:17:43
@article{fa52c5bc-3ed3-49ae-80ca-f3d695cb8017,
  abstract     = {{We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (similar to 0.0001%) exhibit a low resistance of a few k Omega at 300 K and a 4% positive MR at 1.6 K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several M Omega at 300 K and a large negative MR of 85% at 1.6 K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics. (C) 2014 AIP Publishing LLC.}},
  author       = {{Paschoal, Waldomiro and Kumar, Sandeep and Jacobsson, Daniel and Johannes, A. and Jain, Vishal and Canali, C. M. and Pertsova, A. and Ronning, C. and Dick Thelander, Kimberly and Samuelson, Lars and Pettersson, Håkan}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{15}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires}},
  url          = {{http://dx.doi.org/10.1063/1.4870423}},
  doi          = {{10.1063/1.4870423}},
  volume       = {{104}},
  year         = {{2014}},
}