Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
(2014) In Physical Review B (Condensed Matter and Materials Physics) 89(16).- Abstract
- We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is... (More)
- We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4547995
- author
- Vainorius, Neimantas
LU
; Jacobsson, Daniel
LU
; Lehmann, Sebastian LU ; Gustafsson, Anders LU
; Dick Thelander, Kimberly LU ; Samuelson, Lars LU and Pistol, Mats-Erik LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 89
- issue
- 16
- article number
- 165423
- publisher
- American Physical Society
- external identifiers
-
- wos:000337302000005
- scopus:84899732464
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.89.165423
- language
- English
- LU publication?
- yes
- id
- b7d5ef4d-eeb8-4d58-aa00-8467aba46aea (old id 4547995)
- date added to LUP
- 2016-04-01 14:26:53
- date last changed
- 2024-10-10 17:03:06
@article{b7d5ef4d-eeb8-4d58-aa00-8467aba46aea, abstract = {{We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs.}}, author = {{Vainorius, Neimantas and Jacobsson, Daniel and Lehmann, Sebastian and Gustafsson, Anders and Dick Thelander, Kimberly and Samuelson, Lars and Pistol, Mats-Erik}}, issn = {{1098-0121}}, language = {{eng}}, number = {{16}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires}}, url = {{http://dx.doi.org/10.1103/PhysRevB.89.165423}}, doi = {{10.1103/PhysRevB.89.165423}}, volume = {{89}}, year = {{2014}}, }