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Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

Vainorius, Neimantas LU ; Jacobsson, Daniel LU ; Lehmann, Sebastian LU ; Gustafsson, Anders LU ; Dick Thelander, Kimberly LU ; Samuelson, Lars LU and Pistol, Mats-Erik LU (2014) In Physical Review B (Condensed Matter and Materials Physics) 89(16).
Abstract
We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is... (More)
We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
89
issue
16
publisher
American Physical Society
external identifiers
  • wos:000337302000005
  • scopus:84899732464
ISSN
1098-0121
DOI
10.1103/PhysRevB.89.165423
language
English
LU publication?
yes
id
b7d5ef4d-eeb8-4d58-aa00-8467aba46aea (old id 4547995)
date added to LUP
2014-07-16 15:51:34
date last changed
2017-10-08 04:02:26
@article{b7d5ef4d-eeb8-4d58-aa00-8467aba46aea,
  abstract     = {We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs.},
  articleno    = {165423},
  author       = {Vainorius, Neimantas and Jacobsson, Daniel and Lehmann, Sebastian and Gustafsson, Anders and Dick Thelander, Kimberly and Samuelson, Lars and Pistol, Mats-Erik},
  issn         = {1098-0121},
  language     = {eng},
  number       = {16},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires},
  url          = {http://dx.doi.org/10.1103/PhysRevB.89.165423},
  volume       = {89},
  year         = {2014},
}