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Surface and electronic structure of epitaxial PtLuSb (001) thin films

Patel, Sahil J.; Kawasaki, Jason K.; Logan, John; Schultz, Brian D.; Adell, Johan LU ; Thiagarajan, Balasubramanian LU ; Mikkelsen, Anders LU and Palmstrom, Chris J. (2014) In Applied Physics Letters 104(20).
Abstract
The surface and electronic structure of single crystal thin films of PtLuSb (001) grown by molecular beam epitaxy were studied. Scanning tunneling spectroscopy (STS), photoemission spectroscopy, and temperature dependent Hall measurements of PtLuSb thin films are consistent with a zero-gap semiconductor or semi-metal. STS and photoemission measurements show a decrease in density of states approaching the Fermi level for both valence and conduction bands as well as a slight shift of the Fermi level position into the valence band. Temperature dependent Hall measurements also corroborate the Fermi level position by measurement of p-type carriers. (C) 2014 AIP Publishing LLC.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
104
issue
20
publisher
American Institute of Physics
external identifiers
  • wos:000337140800018
  • scopus:84901455230
ISSN
0003-6951
DOI
10.1063/1.4879475
language
English
LU publication?
yes
id
a04273a3-3dae-4074-8fca-8e725efbf627 (old id 4552135)
date added to LUP
2014-07-17 09:36:23
date last changed
2017-08-27 03:19:20
@article{a04273a3-3dae-4074-8fca-8e725efbf627,
  abstract     = {The surface and electronic structure of single crystal thin films of PtLuSb (001) grown by molecular beam epitaxy were studied. Scanning tunneling spectroscopy (STS), photoemission spectroscopy, and temperature dependent Hall measurements of PtLuSb thin films are consistent with a zero-gap semiconductor or semi-metal. STS and photoemission measurements show a decrease in density of states approaching the Fermi level for both valence and conduction bands as well as a slight shift of the Fermi level position into the valence band. Temperature dependent Hall measurements also corroborate the Fermi level position by measurement of p-type carriers. (C) 2014 AIP Publishing LLC.},
  articleno    = {201603},
  author       = {Patel, Sahil J. and Kawasaki, Jason K. and Logan, John and Schultz, Brian D. and Adell, Johan and Thiagarajan, Balasubramanian and Mikkelsen, Anders and Palmstrom, Chris J.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {20},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Surface and electronic structure of epitaxial PtLuSb (001) thin films},
  url          = {http://dx.doi.org/10.1063/1.4879475},
  volume       = {104},
  year         = {2014},
}