Surface and electronic structure of epitaxial PtLuSb (001) thin films
(2014) In Applied Physics Letters 104(20).- Abstract
- The surface and electronic structure of single crystal thin films of PtLuSb (001) grown by molecular beam epitaxy were studied. Scanning tunneling spectroscopy (STS), photoemission spectroscopy, and temperature dependent Hall measurements of PtLuSb thin films are consistent with a zero-gap semiconductor or semi-metal. STS and photoemission measurements show a decrease in density of states approaching the Fermi level for both valence and conduction bands as well as a slight shift of the Fermi level position into the valence band. Temperature dependent Hall measurements also corroborate the Fermi level position by measurement of p-type carriers. (C) 2014 AIP Publishing LLC.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4552135
- author
- Patel, Sahil J. ; Kawasaki, Jason K. ; Logan, John ; Schultz, Brian D. ; Adell, Johan LU ; Thiagarajan, Balasubramanian LU ; Mikkelsen, Anders LU and Palmstrom, Chris J.
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 104
- issue
- 20
- article number
- 201603
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000337140800018
- scopus:84901455230
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4879475
- language
- English
- LU publication?
- yes
- id
- a04273a3-3dae-4074-8fca-8e725efbf627 (old id 4552135)
- date added to LUP
- 2016-04-01 10:17:57
- date last changed
- 2023-08-30 23:09:51
@article{a04273a3-3dae-4074-8fca-8e725efbf627, abstract = {{The surface and electronic structure of single crystal thin films of PtLuSb (001) grown by molecular beam epitaxy were studied. Scanning tunneling spectroscopy (STS), photoemission spectroscopy, and temperature dependent Hall measurements of PtLuSb thin films are consistent with a zero-gap semiconductor or semi-metal. STS and photoemission measurements show a decrease in density of states approaching the Fermi level for both valence and conduction bands as well as a slight shift of the Fermi level position into the valence band. Temperature dependent Hall measurements also corroborate the Fermi level position by measurement of p-type carriers. (C) 2014 AIP Publishing LLC.}}, author = {{Patel, Sahil J. and Kawasaki, Jason K. and Logan, John and Schultz, Brian D. and Adell, Johan and Thiagarajan, Balasubramanian and Mikkelsen, Anders and Palmstrom, Chris J.}}, issn = {{0003-6951}}, language = {{eng}}, number = {{20}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Surface and electronic structure of epitaxial PtLuSb (001) thin films}}, url = {{http://dx.doi.org/10.1063/1.4879475}}, doi = {{10.1063/1.4879475}}, volume = {{104}}, year = {{2014}}, }