Creation of MnAs nanoclusters during processing of GaMnAs
(2009) 9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9) 78. p.116-119- Abstract
- GaMnAs layers on (0 0 1)-oriented GaAs substrates were grown by the molecular beam epitaxy (MBE) method. Structural properties of samples processed at up to 920 K under hydrostatic Ar pressure up to 1.1 GPa were investigated by X-ray, secondary ion mass spectroscopy and atomic force microscopy methods. The sign of strain (compressive or tensile) of the GaMnAs layers, related to a creation of MnAs nanoclusters, is found to be dependent on processing conditions and on primary structure defects, whereas it was independent of Mn concentration. An influence of the defects structure in as-grown samples on the strain state of processed GaMnAs layers is discussed. (C) 2009 Elsevier Ltd. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1507236
- author
- Bak-Misiuk, J. ; Domagala, J. Z. ; Romanowski, P. ; Dynowska, E. ; Lusakowska, E. ; Misiuk, A. ; Paszkowicz, W. ; Sadowski, Janusz LU ; Barcz, A. and Caliebe, W.
- organization
- publishing date
- 2009
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Nanocluster, Strain, X-ray diffraction, Thin layer, GaMnAs, Annealing, High pressure
- host publication
- Radiation Physics And Chemistry
- volume
- 78
- pages
- 116 - 119
- publisher
- Elsevier
- conference name
- 9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9)
- conference location
- Ameliowka, Poland
- conference dates
- 2008-06-15 - 2008-06-20
- external identifiers
-
- wos:000270692000027
- scopus:69049117162
- ISSN
- 0969-806X
- DOI
- 10.1016/j.radphyschem.2009.03.083
- language
- English
- LU publication?
- yes
- id
- 45c5346c-8384-4696-be26-8ab9481bc0e9 (old id 1507236)
- date added to LUP
- 2016-04-01 14:44:57
- date last changed
- 2022-03-31 14:53:42
@inproceedings{45c5346c-8384-4696-be26-8ab9481bc0e9, abstract = {{GaMnAs layers on (0 0 1)-oriented GaAs substrates were grown by the molecular beam epitaxy (MBE) method. Structural properties of samples processed at up to 920 K under hydrostatic Ar pressure up to 1.1 GPa were investigated by X-ray, secondary ion mass spectroscopy and atomic force microscopy methods. The sign of strain (compressive or tensile) of the GaMnAs layers, related to a creation of MnAs nanoclusters, is found to be dependent on processing conditions and on primary structure defects, whereas it was independent of Mn concentration. An influence of the defects structure in as-grown samples on the strain state of processed GaMnAs layers is discussed. (C) 2009 Elsevier Ltd. All rights reserved.}}, author = {{Bak-Misiuk, J. and Domagala, J. Z. and Romanowski, P. and Dynowska, E. and Lusakowska, E. and Misiuk, A. and Paszkowicz, W. and Sadowski, Janusz and Barcz, A. and Caliebe, W.}}, booktitle = {{Radiation Physics And Chemistry}}, issn = {{0969-806X}}, keywords = {{Nanocluster; Strain; X-ray diffraction; Thin layer; GaMnAs; Annealing; High pressure}}, language = {{eng}}, pages = {{116--119}}, publisher = {{Elsevier}}, title = {{Creation of MnAs nanoclusters during processing of GaMnAs}}, url = {{http://dx.doi.org/10.1016/j.radphyschem.2009.03.083}}, doi = {{10.1016/j.radphyschem.2009.03.083}}, volume = {{78}}, year = {{2009}}, }