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Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mndoped GaAs

Kovacs, Andras ; Sadowski, Janusz LU ; Kasama, Takeshi ; Duchamp, Martial and Rafal, Dunin-Borkowski (2013) In Journal of Physics D: Applied Physics 46(14). p.7-145309
Abstract
The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 ◦C. After heat treatment at 400, 560 and 630 ◦C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed.
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physics D: Applied Physics
volume
46
issue
14
pages
7 - 145309
publisher
IOP Publishing
external identifiers
  • wos:000316249400025
  • scopus:84875289318
ISSN
1361-6463
DOI
10.1088/0022-3727/46/14/145309
language
English
LU publication?
yes
id
460ff860-60e3-40b6-a95e-af89cd3d7219 (old id 3567583)
date added to LUP
2016-04-01 10:34:29
date last changed
2022-04-04 19:20:46
@article{460ff860-60e3-40b6-a95e-af89cd3d7219,
  abstract     = {{The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 ◦C. After heat treatment at 400, 560 and 630 ◦C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed.}},
  author       = {{Kovacs, Andras and Sadowski, Janusz and Kasama, Takeshi and Duchamp, Martial and Rafal, Dunin-Borkowski}},
  issn         = {{1361-6463}},
  language     = {{eng}},
  number       = {{14}},
  pages        = {{7--145309}},
  publisher    = {{IOP Publishing}},
  series       = {{Journal of Physics D: Applied Physics}},
  title        = {{Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mndoped GaAs}},
  url          = {{http://dx.doi.org/10.1088/0022-3727/46/14/145309}},
  doi          = {{10.1088/0022-3727/46/14/145309}},
  volume       = {{46}},
  year         = {{2013}},
}