Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires
(2014) In Journal of Physics D: Applied Physics 47(39).- Abstract
- We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing... (More)
- We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4709948
- author
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- ion beam, sputter yield, nanowires, x-ray fluorescence, GaAs, ZnO, monte, carlo simulation
- in
- Journal of Physics D: Applied Physics
- volume
- 47
- issue
- 39
- article number
- 394003
- publisher
- IOP Publishing
- external identifiers
-
- wos:000341772000005
- scopus:84922124528
- ISSN
- 1361-6463
- DOI
- 10.1088/0022-3727/47/39/394003
- language
- English
- LU publication?
- yes
- id
- 840e524f-ec0c-483f-9d58-4e88d4cb2684 (old id 4709948)
- date added to LUP
- 2016-04-01 13:33:07
- date last changed
- 2024-10-10 04:05:02
@article{840e524f-ec0c-483f-9d58-4e88d4cb2684, abstract = {{We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency.}}, author = {{Johannes, A. and Noack, S. and Paschoal, Waldomiro and Kumar, Sandeep and Jacobsson, Daniel and Pettersson, Håkan and Samuelson, Lars and Dick Thelander, Kimberly and Martinez-Criado, G. and Burghammer, M. and Ronning, C.}}, issn = {{1361-6463}}, keywords = {{ion beam; sputter yield; nanowires; x-ray fluorescence; GaAs; ZnO; monte; carlo simulation}}, language = {{eng}}, number = {{39}}, publisher = {{IOP Publishing}}, series = {{Journal of Physics D: Applied Physics}}, title = {{Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires}}, url = {{http://dx.doi.org/10.1088/0022-3727/47/39/394003}}, doi = {{10.1088/0022-3727/47/39/394003}}, volume = {{47}}, year = {{2014}}, }