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Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires

Johannes, A.; Noack, S.; Paschoal, Waldomiro LU ; Kumar, Sandeep LU ; Jacobsson, Daniel LU ; Pettersson, Håkan LU ; Samuelson, Lars LU ; Dick Thelander, Kimberly LU ; Martinez-Criado, G. and Burghammer, M., et al. (2014) In Journal of Physics D: Applied Physics 47(39).
Abstract
We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing... (More)
We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency. (Less)
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publication status
published
subject
keywords
ion beam, sputter yield, nanowires, x-ray fluorescence, GaAs, ZnO, monte, carlo simulation
in
Journal of Physics D: Applied Physics
volume
47
issue
39
publisher
IOP Publishing
external identifiers
  • wos:000341772000005
  • scopus:84922124528
ISSN
1361-6463
DOI
10.1088/0022-3727/47/39/394003
language
English
LU publication?
yes
id
840e524f-ec0c-483f-9d58-4e88d4cb2684 (old id 4709948)
date added to LUP
2014-10-24 07:43:12
date last changed
2017-09-10 04:02:26
@article{840e524f-ec0c-483f-9d58-4e88d4cb2684,
  abstract     = {We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency.},
  articleno    = {394003},
  author       = {Johannes, A. and Noack, S. and Paschoal, Waldomiro and Kumar, Sandeep and Jacobsson, Daniel and Pettersson, Håkan and Samuelson, Lars and Dick Thelander, Kimberly and Martinez-Criado, G. and Burghammer, M. and Ronning, C.},
  issn         = {1361-6463},
  keyword      = {ion beam,sputter yield,nanowires,x-ray fluorescence,GaAs,ZnO,monte,carlo simulation},
  language     = {eng},
  number       = {39},
  publisher    = {IOP Publishing},
  series       = {Journal of Physics D: Applied Physics},
  title        = {Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires},
  url          = {http://dx.doi.org/10.1088/0022-3727/47/39/394003},
  volume       = {47},
  year         = {2014},
}