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Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

Yastrubchak, O.; Sadowski, Janusz LU ; Gluba, L.; Domagala, J. Z.; Rawski, M.; Zuk, J.; Kulik, M.; Andrearczyk, T. and Wosinski, T. (2014) In Applied Physics Letters 105(7).
Abstract
Impact of Bi incorporation into (Ga,Mn)As layers on their electronic-and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and... (More)
Impact of Bi incorporation into (Ga,Mn)As layers on their electronic-and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition. (C) 2014 AIP Publishing LLC. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
105
issue
7
publisher
American Institute of Physics
external identifiers
  • wos:000341189800045
  • scopus:84916909774
ISSN
0003-6951
DOI
10.1063/1.4893381
language
English
LU publication?
yes
id
bf849452-71ef-4d19-aa70-e308f18478e1 (old id 4714022)
date added to LUP
2014-11-06 13:37:33
date last changed
2017-03-05 03:06:34
@article{bf849452-71ef-4d19-aa70-e308f18478e1,
  abstract     = {Impact of Bi incorporation into (Ga,Mn)As layers on their electronic-and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition. (C) 2014 AIP Publishing LLC.},
  articleno    = {072402},
  author       = {Yastrubchak, O. and Sadowski, Janusz and Gluba, L. and Domagala, J. Z. and Rawski, M. and Zuk, J. and Kulik, M. and Andrearczyk, T. and Wosinski, T.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {7},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers},
  url          = {http://dx.doi.org/10.1063/1.4893381},
  volume       = {105},
  year         = {2014},
}