On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E-1 and E-1 + Delta(1) optical transitions
(2014) In Applied Physics Letters 105(3).- Abstract
- The dilute (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. In this paper, we verify the ellipsometric results and compare them with more precise photoreflectance method, which gives an important insight into the interaction of the Mn-related states with the ones of GaAs valence band. No spectral shifts observed for the E-1 and E-1 + Delta(1) interband transitions in highly doped and annealed (Ga,Mn)As epitaxial layers indicate that the coupling between a detached Mn impurity band and the valence band does not occur. Our findings are supported by the characterizations of the (Ga,Mn)As epitaxial layers with the high resolution transmission electron microscopy and... (More)
- The dilute (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. In this paper, we verify the ellipsometric results and compare them with more precise photoreflectance method, which gives an important insight into the interaction of the Mn-related states with the ones of GaAs valence band. No spectral shifts observed for the E-1 and E-1 + Delta(1) interband transitions in highly doped and annealed (Ga,Mn)As epitaxial layers indicate that the coupling between a detached Mn impurity band and the valence band does not occur. Our findings are supported by the characterizations of the (Ga,Mn)As epitaxial layers with the high resolution transmission electron microscopy and magnetization measurements. (c) 2014 AIP Publishing LLC. (Less)
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- author
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 105
- issue
- 3
- article number
- 032408
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000341152300051
- scopus:84905585073
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4891329
- language
- English
- LU publication?
- yes
- id
- 1ea61418-044f-4c06-84a6-5d94a7c12f03 (old id 4725963)
- date added to LUP
- 2016-04-01 10:06:53
- date last changed
- 2022-01-25 19:51:32
@article{1ea61418-044f-4c06-84a6-5d94a7c12f03,
abstract = {{The dilute (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. In this paper, we verify the ellipsometric results and compare them with more precise photoreflectance method, which gives an important insight into the interaction of the Mn-related states with the ones of GaAs valence band. No spectral shifts observed for the E-1 and E-1 + Delta(1) interband transitions in highly doped and annealed (Ga,Mn)As epitaxial layers indicate that the coupling between a detached Mn impurity band and the valence band does not occur. Our findings are supported by the characterizations of the (Ga,Mn)As epitaxial layers with the high resolution transmission electron microscopy and magnetization measurements. (c) 2014 AIP Publishing LLC.}},
author = {{Gluba, L. and Yastrubchak, O. and Sek, G. and Rudno-Rudzinski, W. and Sadowski, Janusz and Kulik, M. and Rzodkiewicz, W. and Rawski, M. and Andrearczyk, T. and Misiewicz, J. and Wosinski, T. and Zuk, J.}},
issn = {{0003-6951}},
language = {{eng}},
number = {{3}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E-1 and E-1 + Delta(1) optical transitions}},
url = {{http://dx.doi.org/10.1063/1.4891329}},
doi = {{10.1063/1.4891329}},
volume = {{105}},
year = {{2014}},
}