Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping

Adell, M. LU ; Adell, J. LU ; Ilver, L. ; Kanski, J. ; Sadowski, J. LU and Domagala, J. Z. (2007) In Physical Review B (Condensed Matter and Materials Physics) 75(5).
Abstract

Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1×2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.

Please use this url to cite or link to this publication:
author
; ; ; ; and
publishing date
type
Contribution to journal
publication status
published
in
Physical Review B (Condensed Matter and Materials Physics)
volume
75
issue
5
article number
054415
publisher
American Physical Society
external identifiers
  • scopus:33847198252
ISSN
1098-0121
DOI
10.1103/PhysRevB.75.054415
language
English
LU publication?
no
id
479e4b74-99f1-4f99-a589-cc2520966ce9
date added to LUP
2016-05-03 15:37:33
date last changed
2025-10-14 09:32:26
@article{479e4b74-99f1-4f99-a589-cc2520966ce9,
  abstract     = {{<p>Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1×2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.</p>}},
  author       = {{Adell, M. and Adell, J. and Ilver, L. and Kanski, J. and Sadowski, J. and Domagala, J. Z.}},
  issn         = {{1098-0121}},
  language     = {{eng}},
  month        = {{02}},
  number       = {{5}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B (Condensed Matter and Materials Physics)}},
  title        = {{Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.75.054415}},
  doi          = {{10.1103/PhysRevB.75.054415}},
  volume       = {{75}},
  year         = {{2007}},
}