Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping
(2007) In Physical Review B (Condensed Matter and Materials Physics) 75(5).- Abstract
Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1×2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/479e4b74-99f1-4f99-a589-cc2520966ce9
- author
- Adell, M. LU ; Adell, J. LU ; Ilver, L. ; Kanski, J. ; Sadowski, J. LU and Domagala, J. Z.
- publishing date
- 2007-02-22
- type
- Contribution to journal
- publication status
- published
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 75
- issue
- 5
- article number
- 054415
- publisher
- American Physical Society
- external identifiers
-
- scopus:33847198252
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.75.054415
- language
- English
- LU publication?
- no
- id
- 479e4b74-99f1-4f99-a589-cc2520966ce9
- date added to LUP
- 2016-05-03 15:37:33
- date last changed
- 2023-03-23 10:09:05
@article{479e4b74-99f1-4f99-a589-cc2520966ce9, abstract = {{<p>Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1×2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.</p>}}, author = {{Adell, M. and Adell, J. and Ilver, L. and Kanski, J. and Sadowski, J. and Domagala, J. Z.}}, issn = {{1098-0121}}, language = {{eng}}, month = {{02}}, number = {{5}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping}}, url = {{http://dx.doi.org/10.1103/PhysRevB.75.054415}}, doi = {{10.1103/PhysRevB.75.054415}}, volume = {{75}}, year = {{2007}}, }