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Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method

Johansson, Sofia LU ; Mo, Jiongjiong LU and Lind, Erik LU (2013) 43rd Conference on European Solid-State Device Research p.53-56
Abstract
The significant defect-induced increase in transconductance at high frequencies in some III-V MOSFETs is utilized to reveal the spatial distribution and energy profile of traps in the gate dielectric. The frequency response of the border traps is modeled as a distributed RC network inserted in the small signal model. Surface-channel InGaAs MOSFETs with Al2O3/HfO2 high-k gate dielectric are evaluated; especially the effects of inserting an InP cap layer in the gate stack.
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author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
pages
53 - 56
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
43rd Conference on European Solid-State Device Research
conference dates
2013-09-16 - 2013-09-20
external identifiers
  • wos:000342231600011
  • scopus:84902205933
ISSN
1930-8876
language
English
LU publication?
yes
id
fa30dab7-5c75-409f-a036-964dc99554ba (old id 4810264)
date added to LUP
2016-04-01 14:43:21
date last changed
2020-08-26 02:52:39
@inproceedings{fa30dab7-5c75-409f-a036-964dc99554ba,
  abstract     = {The significant defect-induced increase in transconductance at high frequencies in some III-V MOSFETs is utilized to reveal the spatial distribution and energy profile of traps in the gate dielectric. The frequency response of the border traps is modeled as a distributed RC network inserted in the small signal model. Surface-channel InGaAs MOSFETs with Al2O3/HfO2 high-k gate dielectric are evaluated; especially the effects of inserting an InP cap layer in the gate stack.},
  author       = {Johansson, Sofia and Mo, Jiongjiong and Lind, Erik},
  booktitle    = {2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)},
  issn         = {1930-8876},
  language     = {eng},
  pages        = {53--56},
  publisher    = {IEEE - Institute of Electrical and Electronics Engineers Inc.},
  title        = {Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method},
  year         = {2013},
}