Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Hole Trapping: The Critical Factor for Quantum Dot Sensitized Solar Cell Performance

Qenawy, Mohamed LU ; Marschan, Rebecca ; Zidek, Karel LU ; Messing, Maria LU ; Abdelwahab, Abdallah ; Chabera, Pavel LU ; Zheng, Kaibo LU and Pullerits, Tönu LU (2014) In Journal of Physical Chemistry C 118(44). p.25802-25808
Abstract
The performance of the current quantum dot (QD) solar cells is limited by several deficiencies. One of them is the existence of surface traps, especially hole traps, which are blocking the hole injection into the electrolyte. The trapping can be efficiently suppressed by growing a shell of wider band gap material around the core dot. Optimum parameters of such a shell layer for photovoltaic applications are, however, not established. We study effects of the shell formation on the ultrafast carrier dynamics and the performance of QD-sensitized solar cells. We can disentangle electron and hole dynamics and demonstrate that the QD shell diminishes surface hole trapping. By combining the knowledge about the hole trapping and electron injection... (More)
The performance of the current quantum dot (QD) solar cells is limited by several deficiencies. One of them is the existence of surface traps, especially hole traps, which are blocking the hole injection into the electrolyte. The trapping can be efficiently suppressed by growing a shell of wider band gap material around the core dot. Optimum parameters of such a shell layer for photovoltaic applications are, however, not established. We study effects of the shell formation on the ultrafast carrier dynamics and the performance of QD-sensitized solar cells. We can disentangle electron and hole dynamics and demonstrate that the QD shell diminishes surface hole trapping. By combining the knowledge about the hole trapping and electron injection into metal oxide we can clearly correlate the electron and hole dynamics with the solar cell efficiency as a function of the shell thickness. We conclude that the optimal shell thickness is 1.3 nm for this system. (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physical Chemistry C
volume
118
issue
44
pages
25802 - 25808
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000344579300056
  • scopus:84949115809
ISSN
1932-7447
DOI
10.1021/jp5086284
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060), Solid State Physics (011013006)
id
5a093870-e970-4ad0-98fb-a13f28b6c209 (old id 4865228)
date added to LUP
2016-04-01 10:59:16
date last changed
2021-09-29 05:27:54
@article{5a093870-e970-4ad0-98fb-a13f28b6c209,
  abstract     = {The performance of the current quantum dot (QD) solar cells is limited by several deficiencies. One of them is the existence of surface traps, especially hole traps, which are blocking the hole injection into the electrolyte. The trapping can be efficiently suppressed by growing a shell of wider band gap material around the core dot. Optimum parameters of such a shell layer for photovoltaic applications are, however, not established. We study effects of the shell formation on the ultrafast carrier dynamics and the performance of QD-sensitized solar cells. We can disentangle electron and hole dynamics and demonstrate that the QD shell diminishes surface hole trapping. By combining the knowledge about the hole trapping and electron injection into metal oxide we can clearly correlate the electron and hole dynamics with the solar cell efficiency as a function of the shell thickness. We conclude that the optimal shell thickness is 1.3 nm for this system.},
  author       = {Qenawy, Mohamed and Marschan, Rebecca and Zidek, Karel and Messing, Maria and Abdelwahab, Abdallah and Chabera, Pavel and Zheng, Kaibo and Pullerits, Tönu},
  issn         = {1932-7447},
  language     = {eng},
  number       = {44},
  pages        = {25802--25808},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Journal of Physical Chemistry C},
  title        = {Hole Trapping: The Critical Factor for Quantum Dot Sensitized Solar Cell Performance},
  url          = {http://dx.doi.org/10.1021/jp5086284},
  doi          = {10.1021/jp5086284},
  volume       = {118},
  year         = {2014},
}