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Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

Schukfeh, M. I.; Storm, Kristian LU ; Hansen, A.; Thelander, Claes LU ; Hinze, P.; Beyer, A.; Weimann, T.; Samuelson, Lars LU and Tornow, M. (2014) In Nanotechnology 25(46).
Abstract
We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality... (More)
We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
InAs/InP, selective etching, heterostructure nanowires, nanogap, electrodes, dielectrophoresis
in
Nanotechnology
volume
25
issue
46
publisher
IOP Publishing
external identifiers
  • wos:000344375500010
  • scopus:84909619272
ISSN
0957-4484
DOI
10.1088/0957-4484/25/46/465306
language
English
LU publication?
yes
id
33971f7b-060c-454a-a14d-340eaa62e4fc (old id 4874990)
date added to LUP
2014-12-30 15:19:18
date last changed
2017-08-06 03:04:37
@article{33971f7b-060c-454a-a14d-340eaa62e4fc,
  abstract     = {We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.},
  articleno    = {465306},
  author       = {Schukfeh, M. I. and Storm, Kristian and Hansen, A. and Thelander, Claes and Hinze, P. and Beyer, A. and Weimann, T. and Samuelson, Lars and Tornow, M.},
  issn         = {0957-4484},
  keyword      = {InAs/InP,selective etching,heterostructure nanowires,nanogap,electrodes,dielectrophoresis},
  language     = {eng},
  number       = {46},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments},
  url          = {http://dx.doi.org/10.1088/0957-4484/25/46/465306},
  volume       = {25},
  year         = {2014},
}