Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments
(2014) In Nanotechnology 25(46).- Abstract
- We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality... (More)
- We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4874990
- author
- Schukfeh, M. I. ; Storm, Kristian LU ; Hansen, A. ; Thelander, Claes LU ; Hinze, P. ; Beyer, A. ; Weimann, T. ; Samuelson, Lars LU and Tornow, M.
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- InAs/InP, selective etching, heterostructure nanowires, nanogap, electrodes, dielectrophoresis
- in
- Nanotechnology
- volume
- 25
- issue
- 46
- article number
- 465306
- publisher
- IOP Publishing
- external identifiers
-
- wos:000344375500010
- scopus:84909619272
- pmid:25360747
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/25/46/465306
- language
- English
- LU publication?
- yes
- id
- 33971f7b-060c-454a-a14d-340eaa62e4fc (old id 4874990)
- date added to LUP
- 2016-04-01 10:01:46
- date last changed
- 2023-10-25 22:46:40
@article{33971f7b-060c-454a-a14d-340eaa62e4fc, abstract = {{We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.}}, author = {{Schukfeh, M. I. and Storm, Kristian and Hansen, A. and Thelander, Claes and Hinze, P. and Beyer, A. and Weimann, T. and Samuelson, Lars and Tornow, M.}}, issn = {{0957-4484}}, keywords = {{InAs/InP; selective etching; heterostructure nanowires; nanogap; electrodes; dielectrophoresis}}, language = {{eng}}, number = {{46}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments}}, url = {{http://dx.doi.org/10.1088/0957-4484/25/46/465306}}, doi = {{10.1088/0957-4484/25/46/465306}}, volume = {{25}}, year = {{2014}}, }