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Transition to the quantum hall regime in InAs nanowire cross-junctions

Gooth, Johannes; Borg, Mattias LU ; Schmid, Heinz ; Bologna, Nicolas; Rossell, Marta D.; Wirths, Stephan; Moselund, Kirsten E.; Nielsch, Kornelius and Riel, Heike (2019) In Semiconductor Science and Technology 34.
Abstract
We present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve 2/h)−1. e is the elementary charge, h denotes Planck's... (More)
We present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve 2/h)−1. e is the elementary charge, h denotes Planck's constant and v is an integer that coincides with the Landau level index determined from the longitudinal conductance measurements. While the 1D conductance quantization in zero magnetic field is fragile against disorder at the NW surface, the plateaus in the Hall resistance at high fields remain robust as expected for a topologically protected Quantum Hall phase. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Magneto-transport, Nanowire, Conductance quantization, InAs, TASE
in
Semiconductor Science and Technology
volume
34
publisher
IOP Publishing
external identifiers
  • scopus:85064084857
ISSN
0268-1242
DOI
10.1088/1361-6641/ab0591
language
English
LU publication?
yes
id
4926e8fd-5c2b-433e-8937-d1868b38fd15
date added to LUP
2019-03-15 15:07:13
date last changed
2019-05-14 04:52:28
@article{4926e8fd-5c2b-433e-8937-d1868b38fd15,
  abstract     = {We present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve 2/h)−1. e is the elementary charge, h denotes Planck's constant and v is an integer that coincides with the Landau level index determined from the longitudinal conductance measurements. While the 1D conductance quantization in zero magnetic field is fragile against disorder at the NW surface, the plateaus in the Hall resistance at high fields remain robust as expected for a topologically protected Quantum Hall phase.},
  articleno    = {035028},
  author       = {Gooth, Johannes and Borg, Mattias and Schmid, Heinz  and Bologna, Nicolas and Rossell, Marta D. and Wirths, Stephan and Moselund, Kirsten E. and Nielsch, Kornelius and Riel, Heike},
  issn         = {0268-1242},
  keyword      = {Magneto-transport,Nanowire,Conductance quantization,InAs,TASE},
  language     = {eng},
  month        = {02},
  publisher    = {IOP Publishing},
  series       = {Semiconductor Science and Technology},
  title        = {Transition to the quantum hall regime in InAs nanowire cross-junctions},
  url          = {http://dx.doi.org/10.1088/1361-6641/ab0591},
  volume       = {34},
  year         = {2019},
}