Advanced

Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers

Levchenko, K.; Andrearczyk, T.; Domagala, J. Z.; Wosinski, T.; Figielski, T. and Sadowski, Janusz LU (2014) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 126(5). p.1121-1124
Abstract
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
volume
126
issue
5
pages
1121 - 1124
publisher
Institute of Physics, Polish Academy of Sciences
external identifiers
  • wos:000346069100020
  • scopus:84916910576
ISSN
0587-4246
language
English
LU publication?
yes
id
8e930ea4-5c04-4a56-81cb-85ce61c37792 (old id 4960534)
date added to LUP
2015-01-28 16:15:27
date last changed
2017-03-05 03:48:40
@article{8e930ea4-5c04-4a56-81cb-85ce61c37792,
  abstract     = {High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.},
  author       = {Levchenko, K. and Andrearczyk, T. and Domagala, J. Z. and Wosinski, T. and Figielski, T. and Sadowski, Janusz},
  issn         = {0587-4246},
  language     = {eng},
  number       = {5},
  pages        = {1121--1124},
  publisher    = {Institute of Physics, Polish Academy of Sciences},
  series       = {Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics},
  title        = {Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers},
  volume       = {126},
  year         = {2014},
}