Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates
(2013) In Nanoscale 5(16). p.7410-7418- Abstract
- Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman
scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping
level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual... (More) - Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman
scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping
level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with
the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4023136
- author
- Gas, Katarzyna ; Sadowski, Janusz LU ; Kasama, Takeshi ; Siusys, Aloyzas ; Zaleszczyk, Wojciech ; Wojciechowski, Tomasz ; Morhange, Jean-François ; Altintas, Abdulmenaf and Xu, Hongqi LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanowires, molecular beam epitaxy, spintronics
- in
- Nanoscale
- volume
- 5
- issue
- 16
- pages
- 7410 - 7418
- publisher
- Royal Society of Chemistry
- external identifiers
-
- wos:000322315600040
- scopus:84880864291
- ISSN
- 2040-3372
- DOI
- 10.1039/c3nr01145c
- language
- English
- LU publication?
- yes
- id
- 4a255946-a28c-4886-a91e-7f5d03fc3d16 (old id 4023136)
- date added to LUP
- 2016-04-01 10:05:59
- date last changed
- 2023-08-30 17:31:41
@article{4a255946-a28c-4886-a91e-7f5d03fc3d16, abstract = {{Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman<br/><br> scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping<br/><br> level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with<br/><br> the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.}}, author = {{Gas, Katarzyna and Sadowski, Janusz and Kasama, Takeshi and Siusys, Aloyzas and Zaleszczyk, Wojciech and Wojciechowski, Tomasz and Morhange, Jean-François and Altintas, Abdulmenaf and Xu, Hongqi}}, issn = {{2040-3372}}, keywords = {{Nanowires; molecular beam epitaxy; spintronics}}, language = {{eng}}, number = {{16}}, pages = {{7410--7418}}, publisher = {{Royal Society of Chemistry}}, series = {{Nanoscale}}, title = {{Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates}}, url = {{http://dx.doi.org/10.1039/c3nr01145c}}, doi = {{10.1039/c3nr01145c}}, volume = {{5}}, year = {{2013}}, }